Advertisement

Low Pressure Microwave Glow Discharge Process for High Deposition Rate Amorphous Silicon Alloy

  • S. J. Hudgens
  • A. G. Johncock
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

As glow discharge amorphous silicon alloys become more important for commercial production of photovoltaic, xerographic, optical sensing, and microelectronic devices, economic considerations have motivated considerable research aimed at increasing deposition rate and gas utilization efficiency. Recently, a low pressure microwave glow discharge process was reported (1) which produces good quality a-Si:F:H films, with essentially 100% gas utilization at deposition rates > 100Å/sec.

Keywords

Glow Discharge High Deposition Rate Increase Deposition Rate Deposition Rate Film Plasma Diagnostic Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    S.J. Hudgens and A.G. Johncock, Proc. MRS Spring Meeting (San Francisco, 1985), to be published.Google Scholar
  2. 2.
    E.R. Mosburg, R.C. Kerns and J.R. Abelson, J. Appl. Phys. 54 (1983) 4916.ADSCrossRefGoogle Scholar
  3. 3.
    F.F. Chen, in Plasma Diagnostic Techniques, edited by R.H. Huddlestone and S.L. Leonard (Academic Press, New York, 1965) Chap. 4.Google Scholar
  4. 4.
    CM. Ferreira and J. Loureiro, J. Phys. D 17. (1984) 1175.ADSCrossRefGoogle Scholar
  5. 5.
    P.E. Vanier, F.J. Kampas, R.R. Corderman and G. Rajeswaran, J. Appl. Phys. 56 (1984) 1812.ADSCrossRefGoogle Scholar
  6. 6.
    R.C. Ross, I.S.T. Tsong, R. Messier, W.A. Lanford and C. Burman, J. Vac. Sci. Technol., 20 (1982) 406.ADSCrossRefGoogle Scholar
  7. 7.
    R.C. Ross and J. Jaklik Jr., J. Appl. Phys. 55 (1984) 3785.ADSCrossRefGoogle Scholar
  8. 8.
    J.P.M. Schmitt, J. Non-Cryst. Solids 59/60 (1983) 649.ADSCrossRefGoogle Scholar
  9. 9.
    G. Turban. Y. Catherine and B. Grolleau, Plasma Chemistry and Plasma Processing, 2 (1982) 61.CrossRefGoogle Scholar
  10. 10.
    F. Kampas, Semiconductors and Semimetals, 21A (1984) 153.CrossRefGoogle Scholar
  11. 11.
    S.R. Ovshinsky, Proc. Int’l. Ion Engineering Congress., Kyoto, Japan (1983) 817.Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • S. J. Hudgens
    • 1
  • A. G. Johncock
    • 1
  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

Personalised recommendations