Order Parameters in a-Si Systems

  • R. Tsu
  • J. Gonzalez-Hernandez
  • J. Doehler
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)


THE AMORPHOUS-CRYSTALLINE transition in a-Si and a-Ge has been studied for many years [1,2]. However, unlike electrical and optical properties, no substantial modifications on the RDF (radial distribution function) for the amorphous phases have been reported for different methods of preparation or annealing conditions short of crystallization. More recently, Barna et al. [3] have found a small shift of the second peak in the RDF towards smaller r, and a more pronounced peak at 5 Å for the a-Si: H prepared by glow discharge technique. These authors concluded that a higher degree of local order is present in the glow discharge a-Si: H although they stated that there exist only minor differences in amorphous silicon samples with different preparations. Earlier Raman measurements [4] have not been shown to be sensitive to preparation conditions, however, recent results indicated that Raman measurements can indeed differentiate various types of amorphous silicon samples. Tsu et al.


Amorphous Phase Glow Discharge Amorphous Silicon Local Order Plasma Line 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    S.C. Moss & J.F. Graczyk, Phys. Rev. Lett. 23, 1167(1969).ADSCrossRefGoogle Scholar
  2. 2.
    W. Paul, G.A.N. Connell & R.J. Temkin, Adv. Phys. 22,529(1973).ADSCrossRefGoogle Scholar
  3. 3.
    A. Barna, P.B. Barna, G. Radnoczi, L. Toth & P. Thomas, Phys. Status Solidi 41, 81 (1977).ADSCrossRefGoogle Scholar
  4. 4.
    J.E. Smith, M.H. Brodsky, B.L. Crowder, M.I. Nathan & A. Pinczuk, Phys. Rev. Lett. 26, 642 (1971).ADSCrossRefGoogle Scholar
  5. 5.
    R. Tsu, J.G. Hernandez, J. Doehler & S.R. Ovshinsky, Bull. Amer. Phys. Soc. 27, 3, 207 (1982).Google Scholar
  6. 6.
    S.T. Kshirsagar & J.S. Lannin, Proc. Int. Conf. Phonon Phys. Bloomington (1981).Google Scholar
  7. 7.
    R. Tsu, J.G. Hernandez, S.S. Chao, S.C. Lee & K. Tanaka, Appl. Phys. Lett 40, 534 (1982).ADSCrossRefGoogle Scholar
  8. 8.
    J. Gonzalez-Hernandez & R. Tsu, Appl. Phys. Lett. 42, 90(1983).ADSCrossRefGoogle Scholar
  9. 9.
    P. A. Temple & C.E. Hathaway, Phys. Rev. B7, 3685(1973).ADSGoogle Scholar
  10. 10.
    P.E. Meek,Phil. Mag. 33, 897 (1976).ADSCrossRefGoogle Scholar
  11. 11.
    M.F. Thorpe (private communication).Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • R. Tsu
    • 1
  • J. Gonzalez-Hernandez
    • 1
  • J. Doehler
    • 1
  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

Personalised recommendations