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Order Parameters in a-Si Systems

  • R. Tsu
  • J. Gonzalez-Hernandez
  • J. Doehler
  • S. R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

THE AMORPHOUS-CRYSTALLINE transition in a-Si and a-Ge has been studied for many years [1,2]. However, unlike electrical and optical properties, no substantial modifications on the RDF (radial distribution function) for the amorphous phases have been reported for different methods of preparation or annealing conditions short of crystallization. More recently, Barna et al. [3] have found a small shift of the second peak in the RDF towards smaller r, and a more pronounced peak at 5 Å for the a-Si: H prepared by glow discharge technique. These authors concluded that a higher degree of local order is present in the glow discharge a-Si: H although they stated that there exist only minor differences in amorphous silicon samples with different preparations. Earlier Raman measurements [4] have not been shown to be sensitive to preparation conditions, however, recent results indicated that Raman measurements can indeed differentiate various types of amorphous silicon samples. Tsu et al.

Keywords

Amorphous Phase Glow Discharge Amorphous Silicon Local Order Plasma Line 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • R. Tsu
    • 1
  • J. Gonzalez-Hernandez
    • 1
  • J. Doehler
    • 1
  • S. R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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