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Laser-Induced Fluorescence Detection of Reactive Intermediates in Diffusion Flames and in Glow-Discharge Deposition Reactors

  • Henry U. Lee
  • John P. deNeufville
  • Stanford R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Photovoltaic quality films of a-Si:F:H prepared by the plasma-induced reaction of, for example, SiF4 and H2 appear to contain unusual bonding configurations involving the intimate association of silicon with both fluorine and hydrogen atoms.(1) The creation of radical sub-fluorides of silicon has been suggested as a mechanism for the deposition of such films.(2) Indeed, the presence of various excited-state neutral and ionic silicon radical species has been demonstrated in the optical emission of plasmas containing SiH4, SiF4 and H2,(3,4) and the silylene radical, SiH2, has been proposed to play a dominant role in the deposition of a-Si:H from the H0M0CVD of SiH4.(5)

Keywords

Diffusion Flame Flow Rate Ratio Nozzle Throat Boxcar Integrator Plasma Decomposition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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    S.R. Ovshinsky, 3. Non-Cryst. Solids 32, 17 (1979).CrossRefGoogle Scholar
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    S.R. Ovshinsky and A. Madan, U.S. Patent No. 4,226,898.Google Scholar
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    A. Matsuda and K. Tanaka, Thin Solid Films 92, 171 (1982).ADSCrossRefGoogle Scholar
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    F.J. Kampas and R.W. Griffith, Solar Cells 2, 385 (1980).CrossRefGoogle Scholar
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  7. 7.
    H.U. Lee and J.P. deNeufville, Chem. Phys. Lett. (in press).Google Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Henry U. Lee
    • 1
  • John P. deNeufville
    • 1
  • Stanford R. Ovshinsky
    • 1
  1. 1.Materials Development LaboratoryEnergy Conversion Devices, Inc.North BranchUSA

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