The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems
Previously, we have reported, in heavily As- or P-doped Si:F:H alloy systems, the appearance of a Raman peak lying intermediate between 522 cm-1 for c-Si and 480 cm-1 for amorphous Si.(1,2) Whenever such Raman peak is observed, electrolyte-electro-reflectance (EtR) peaks appear around 2 eV, together with those associated with c-Si at 3.4 eV and 4.5 eV. We have explained these observations in terms of an intermediate range order or a “microcrystalline phase.” Now we have found similar observations in moderately P-doped samples. On glass substrates EER may be observed when the volume fraction of crystallinity has passed 0.16, the critical density, ρ cr, in percolation processes. (3,4) However, on stainless steel substrates, EER has been observed for ρ cr < 0.16, indicating that unlike conductivity, EtR requires only the existence of relatively sharp electronic density of states.
KeywordsRaman Peak High Electric Field Percolation Process Stainless Steel Substrate Brooklyn College
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