Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:H

  • R. Tsu
  • M. Izu
  • S. R. Ovshinsky
  • F. H. Pollak
Part of the Institute for Amorphous Studies Series book series (IASS)


A NEW TYPE of amorphous semiconductor alloy has recently been reported [1]. This new material has silicon and fluorine as its main structural components. It is multi-elemental and includes hydrogen and can also include other elements such as oxygen without deleterious effects. This Si: F: H alloy, prepared by the glow-discharge decomposition of SiF4 mixed with hydrogen, has been reported to overcome a number of problems of a-Si and a-Si: H. The a-Si: F: H alloy is highly photoconductive, possesses a lower density of states in the upper half of the band gap than the a-Si: H alloy and is devoid of any photostructural changes. In order to gain further information about the electronic and vibrational states of this amorphous semiconductor, we have investigated the electrolyte electroreflectance (EER) and Raman spectra of several samples of this material.


Absorption Edge Raman Peak Crystalline Silicon Amorphous Semiconductor Main Structural Component 
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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • R. Tsu
    • 1
  • M. Izu
    • 1
  • S. R. Ovshinsky
    • 1
  • F. H. Pollak
    • 2
  1. 1.Energy Conversion Devices, Inc.TroyUSA
  2. 2.Physics DepartmentBrooklyn College of CUNYBrooklynUSA

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