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Localized States in the Gap of Amorphous Semiconductors

  • Stanford R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Now that the initiation and maintenance of bias-induced switching in threshold-type,l chalogenide-based, amorphous semiconductor materials have been definitively established as electronic processes,2–8, there is one major remaining problem—the nature of the localized states in the gap of these materials. In this Comment I address this subject, with emphasis on their role in the switching transition.

Keywords

Lone Pair Primary Divalency Chalcogenide Glass Dangling Bond Amorphous Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • Stanford R. Ovshinsky
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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