Investigation of Solids by Means of an Ion-Bombardment Mass Spectrometer

  • H. W. Werner
Part of the Developments in Applied Spectroscopy book series (DAIS, volume 7a)


An ion-bombardment mass spectrometer has been applied to the investigation of thin layers and bulk materials. The specimen is mounted in the ion source of the mass spectrometer and bombarded continuously with argon ions of 11 keV energy. Only those particles leaving the surface directly as ions are extracted from the ion source, and are separated according to their m/e ratio. The influence of oxidation on the ion yield has been studied. A method has been derived for indicating metal oxides present in concentrations decreasing as a function of depth. With this method the diffusion profile of indium diffused into a germanium matrix was found to be in good agreement with the theoretical diffusion profile, thus proving the proportionality between ion current and concentration, both as a function of concentration and depth. The coefficient of diffusion of indium in germanium determined from our measurements is in good agreement with the values found by others using methods different from ours.


Energy Spread Diffusion Profile Minimum Detectable Concentration Iron Isotope Mass Spectrometer Investigation 
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Copyright information

© Chicago Section of the society for Applied Spectroscopy 1969

Authors and Affiliations

  • H. W. Werner
    • 1
  1. 1.Philips Research LaboratoriesN. V. Philips’ GloeilampenfabriekenEindhovenNetherlands

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