Interatomic Interaction of Impurities in Heavily Doped Semiconductors

  • V. I. Fistul’


The possible existence of complexes of impurity atoms in heavily doped germanium and gallium arsenide is discussed. An attempt is made to establish the extent to which such complexes can explain the experimental discrepancy between the electron density and the dopant concentration, account for the negative magnetoresistance, and explain the effect of heat treatment on the investigated crystals under chemical equilibrium conditions.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literature Cited

  1. 1.
    V. I. Fistul’, M. G. Mil’vidskii, É. M. Omel’yanovskii, and S. P. Grishina, Dokl. Akad. Nauk SSSR, 149: 1119 (1963).Google Scholar
  2. 2.
    V. I. Fistul’, É. M. Omel’yanovskii, O. V. Pelevin, and V. B. Ufimtsev, Izv. Akad. Nauk SSSR, Neorg. Mater., 2: 657 (1966).Google Scholar
  3. 3.
    L. J. Vieland and I. Kudman, J. Phys. Chem. Solids, 24: 437 (1963).CrossRefGoogle Scholar
  4. 4.
    J. Black, J. Electrochem. Soc., 111: 924 (1964).CrossRefGoogle Scholar
  5. 5.
    J. Bjerrum, Metal Ammine Formation in Aqueous Solution: Theory of Reversible Step Reactions, P. Haase and Son, Copenhagen. (1957).Google Scholar
  6. 6.
    I. Prigogine and R. Defay, Chemical Thermodynamics, Longmans Green & Co., London (1954).Google Scholar
  7. 7.
    D. G. Andrianov, E. P. Rashevskaya, and V. I. Pistil’, Fiz. Teich. Poluprov., 1: 1435 (1967).Google Scholar
  8. 8.
    Y. Furukawa, J. Phys. Soc. Jap., 17: 630 (1962).Google Scholar
  9. 9.
    K. Josida, Phys. Rev., 107: 396 (1957).CrossRefGoogle Scholar
  10. 10.
    J. Kondo, Progr. Theor. Phys., 32: 37 (1964).Google Scholar
  11. 11.
    J. Toyozawa, J. Phys. Soc. Jap., 17: 986 (1962).CrossRefGoogle Scholar

Copyright information

© Consultants Bureau, New York 1972

Authors and Affiliations

  • V. I. Fistul’

There are no affiliations available

Personalised recommendations