Interatomic Interaction of Impurities in Heavily Doped Semiconductors

  • V. I. Fistul’


The possible existence of complexes of impurity atoms in heavily doped germanium and gallium arsenide is discussed. An attempt is made to establish the extent to which such complexes can explain the experimental discrepancy between the electron density and the dopant concentration, account for the negative magnetoresistance, and explain the effect of heat treatment on the investigated crystals under chemical equilibrium conditions.


Inelastic Scattering Impurity Atom Gallium Arsenide Interatomic Interaction Substitutional Solution 
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Copyright information

© Consultants Bureau, New York 1972

Authors and Affiliations

  • V. I. Fistul’

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