Some Properties of Semiconducting Alloys Lying Along the CuInTe2—CdTe Line in the Cu—Cd—In—Te System
Microstructure, x-ray diffraction, and thermographic analyses were made of the physicochemical properties of alloys lying on the CuInTe2—CdTe line [(CuInTe2)x• (2CdTe)1-x]. The dependences of the electrical conductivity, the carrier density, the carrier mobility, the thermoelectric power, and the thermal conductivity on the composition were determined. The alloys with the compositions 0.8 > x > 0 were homogeneous and had the zinc-blende structure. Near the terminal compound CuInTe2, which had the chalcogenide structure, the alloys consisted of two phases: they contained fine second-phase inclusions. The predominant phase in the alloys with the compositions x >0.9 had the chalcopyrite structure. The phase diagram of the investigated system indicated the occurrence of polymorphic solid-state transformations. All the alloys had p-type conduction. The hole density and mobility in the ordered alloys were higher than those in the disordered compositions. The alloys with x < 0.4 were compensated.
KeywordsThermoelectric Power Hole Density Part Conc Chalcopyrite Structure Heterovalent Substitution
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