Some Relationships Governing the Changes in the Conductivity of Semiconducting Compounds at Their Melting Points

  • G. F. Nikol’skaya
  • I. V. Evfimovskii
  • N. P. Luzhnaya


The electrical conductivity of Bi2S3, In2Se3, CdSnAs2, CulnTe2, and CuGaTe2 was investigated in the solid and the liquid states by a contactless method. The results indicated that the conductivity poly-therms (temperature dependences of the conductivity) were determined by the nature of the processes which result in the formation of the compound. The changes in the conductivity at thé melting points were used to divide all the compounds into two groups.


Activation Energy Thermoelectric Power Semiconducting Compound Molten State Intrinsic Conduction 
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Literature Cited

  1. 1.
    M. Cutler and C. E. Mallon,: J. Appl. Phys., 36: 201 (1965).CrossRefGoogle Scholar
  2. 2.
    A. R. Regel’,: Zh. Tekh. Fiz., 28:1511 (1948); Zh. Neorg. Khim., 1: 1217 (1951).Google Scholar
  3. 3.
    D. A. Petrov and V. M. Glazov,: Zavod. Lab., 24: 34 (1958).Google Scholar
  4. 4.
    G. F. Nikol’skaya, V. K. Nikitina, I. V. Evfimovskii, and Yu. K. Lobanova,: Izv. Akad. Nauk SSSR, Neorg. Mater., 1: 1826 (1965).Google Scholar
  5. 5.
    B. T. Kolomiets,: Zh. Tekh. Fiz., 19: 126 (1949).Google Scholar
  6. 6.
    P. P. Konorov,: Zh. Tekh. Fiz., 26: 1126 (1956).Google Scholar
  7. 7.
    J. Black, E. M. Conwell, L. Seigle, and C. W. Spencer,:J. Phys. Chem. Solids, 2: 240 (1957).CrossRefGoogle Scholar
  8. 8.
    L. Gildart, J. M. Kline, and D. M. Mattox, :J. Phys. Chem. Solids, 18:286 (1961) [Erratum: ibid., 20:324 (1961)].Google Scholar
  9. 9.
    R. C. Heckman and D. M. Mattox,:J. Phys. Chem. Solids, 24: 973 (1963).CrossRefGoogle Scholar
  10. 10.
    G. N. Kagirova, I. V. Evfimovskii, and G. F. Nikol’skaya,:Izv. Akad. Nauk SSSR, Neorg. Mater., 2: 2072 (1966).Google Scholar
  11. 11.
    V. K. Nikitina and Yu. K. Lobanova,: Izv. Akad. Nauk SSSR, Neorg. Mater., 1: 1311 (1965).Google Scholar
  12. 12.
    V. A. Romanovskii and V. V. Tarasov,:Fiz. Tverd. Tela, 2: 1287 (1960).Google Scholar
  13. 13.
    S. A. Semiletov,: Fiz. Tverd. Tela, 3: 746 (1961).Google Scholar
  14. 14.
    J. C. Brice, P. C. Newman, and H. C. Wright,: Brit. J. Appl. Phys., 9: 110 (1958).CrossRefGoogle Scholar
  15. 15.
    S. I. Radautsan,: Izv. Mold. Filiala Akad. Nauk SSSR, 3 (9): 49 (1960).Google Scholar
  16. 16.
    H. Miyazawa and S. Sugaike,: J. Phys. Soc. Jap., 12: 312 (1957).CrossRefGoogle Scholar
  17. 17.
    S. Sugaike,: Mineral. J., 2: 63 (1957).Google Scholar
  18. 18.
    G. F. Nikol’skaya, T. N. Guliev, I. V. Evfimovskii, and G. N. Kagirova:,Izv. Akad. Nauk SSSR, Neorg. Mater., 1: 171 (1965).Google Scholar
  19. 19.
    G. K. Slavnova,: Zh. Neorg. Khim., 8: 2217 (1963).Google Scholar
  20. 20.
    S. Mamaev,:Izv. Akad. Nauk Turkm. SSR, Ser. Fiz.-Tekh. Khim. Geol. Nauk, No. 6, p. 7 (1960).Google Scholar
  21. 21.
    A. J. Strauss and A. J.:Rosenberg, J. Phys. Chem. Solids, 17: 278 (1961).CrossRefGoogle Scholar
  22. 22.
    N. A. Goryunova, S. Mamaev, and V. D. Prochukhan,:Dokl. Akad. Nauk SSSR, 142: 623 (1962).Google Scholar
  23. 23.
    M. Matyg and P. Höschl,: Czech. J. Phys., B12: 788 (1962).CrossRefGoogle Scholar
  24. 24.
    P. Leroux-Hugon,: C. R. Acad. Sci., 256: 118 (1963).Google Scholar
  25. 25.
    G. F. Nikol’skaya, L. I. Berger, I. V. Evfimovskii, G. N. Kagirova, I. K. Shchukina, and I. S. Kovaleva,: Izv. Akad. Nauk SSSR, Neorg. Mater., 2: 1876 (1966).Google Scholar
  26. 26.
    D. R. Mason and D. F. O’Kane,: Proc. Fifth Intern. Conf. on Physics of Semiconductors, Prague, 1960, publ. by Academic Press, New York (1961), p. 1026.Google Scholar
  27. 27.
    L. S. Palatnik and E. I. Rogacheva:, Izv. Akad. Nauk SSSR, Neorg. Mater., 2: 659 (1966).Google Scholar
  28. 28.
    S. M. Zalar,: J. Electrochem. Soc., 113: 230 (1966).CrossRefGoogle Scholar
  29. 29.
    L. S. Palatnik and E. K. Belova,:Kristallografiya, 10: 858 (1965).Google Scholar
  30. 30.
    V. P. Zhuze, V. M. Sergeeva, and E. L. Shtrum:, Zh. Tekh. Fiz., 28: 2093 (1958).Google Scholar
  31. 31.
    Z. I. Ornatskaya and N. Savina,:Uch. Zap. Saratov, Gos. Univ., 69: 139 (1960).Google Scholar
  32. 32.
    M. A. Taliba and G. B. Abdullaev,: Dokl. Akad. Nauk Azerb. SSR, 18 (7): 17 (1962).Google Scholar
  33. 33.
    A. V. Petrov and E. L. Shtrum,: Fiz. Tverd. Tela, 4: 1442 (1962).Google Scholar
  34. 34.
    K. Sagel,: Metall, 16: 87 (1962).Google Scholar
  35. 35.
    S. M. Zalar and I. Cadoff,:Trans. AIME, 204: 436 (1962).Google Scholar
  36. 36.
    R. Bobone, L. F. Kendall, and R. H. Vought,:Advan. Energy Conversion, 1: 149 (1961).CrossRefGoogle Scholar
  37. 37.
    A. F. Ioffe and A. R. Regel:, Progr. Semicond., 4: 237 (1960).Google Scholar
  38. 38.
    A. F. Ioffe and A. R. Regel:, Progr. Semicond., 4: 278 (1960).Google Scholar
  39. 39.
    A. F. Ioffe,: Physics of Semiconductors, Infosearch, London (1960).Google Scholar

Copyright information

© Consultants Bureau, New York 1972

Authors and Affiliations

  • G. F. Nikol’skaya
  • I. V. Evfimovskii
  • N. P. Luzhnaya

There are no affiliations available

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