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Electrical Properties

  • Yu. I. Ravich
  • B. A. Efimova
  • I. A. Smirnov
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 5)

Abstract

The electrical conductivity of a solid with a carrier density n is given by the well-known formula
$$ \sigma = e\mu n, $$
(3.1)
where μ is the mobility equal to the average drift velocity of carriers under the action of a unit electric field. The mobility is governed by the scattering of carriers on imperfections (departures from the lattice periodicity), and in the case of elastic scattering the mobility in a semiconductor with a simple parabolic band is
$$ \mu = \frac{{e\left\langle \tau \right\rangle }}{{{m^{*}}}}, $$
(3.2)
where 〈τ〉 is the average relaxation time; m* is the effective mass.

Keywords

Effective Mass Hall Effect Carrier Density Scatter Cross Section Hall Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1970

Authors and Affiliations

  • Yu. I. Ravich
    • 1
  • B. A. Efimova
    • 1
  • I. A. Smirnov
    • 1
  1. 1.Institute of SemiconductorsAcademy of Sciences of the USSRLeningradUSSR

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