Porosity-Free Polycrystalline Silicon Carbide and Its Application in High-Temperature Technology
The procedure for producing porosity-free polycrystalline silicon carbide and components made from it is described. A mechanism by which the structure of the material is formed is suggested. The results of determining the physical properties of porosity-free polycrystalline silicon carbide are reported, and some of the properties are compared with those of other carborundum materials and refractory compounds. Recommendations are made in regard to the industrial application of components made of porosity-free polycrystalline silicon carbide.
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