# Hot-Carrier Degradation During Dynamic Stress

Chapter

## Abstract

In Chapter 1, the degradation of MOS transistors under DC stress conditions was considered. In a real circuit, however, most of the devices are operated dynamically, on account of which the degradation under AC stress conditions has gained increased attention. The most important question in these studies is whether the AC degradation can or cannot be predicted based on a set of DC degradation measurements. When the prediction based on DC measurements stands true, the AC degradation can be studied as a quasistatic process. When, however, the extrapolation turns out to be invalid, physical insight should be obtained for the deviating behavior.

## Keywords

Duty Cycle Gate Voltage Dynamic Stress Stress Time Interface Trap
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## References

- 1.W. Weber, C. Werner, and G. Dorda. “Degradation of n-MOS transistors after pulsed stress.” IEEE Elec. Dev. Lett., vol. EDL-5, pp. 518–520, 1984.CrossRefGoogle Scholar
- 2.W. Weber, C. Werner, and A. v. Schwerin. “Lifetimes and substrate currents in static and dynamic hot-carrier degradation.” IEDM Tech. Dig., pp. 390–393, 1986.Google Scholar
- 3.W. Weber. “Dynamic stress experiments for understanding hot-carrier degradation phenomena.” IEEE Trans. Elec. Dev., vol. 35, pp. 1476–1486, 1988.CrossRefGoogle Scholar
- 4.Y. Igura and E. Takeda. “Hot-carrier degradation mechanism under AC-stress in MOSFETs.” Proc. Symp. VLSI Techn., pp. 47–48, 1987.Google Scholar
- 5.J. Y. Choi, P. K. Ko, and C. Hu. “Hot-carrier-induced MOSFET degradation: AC versus DC stressing.” Proc. VLSI Symp., pp. 45–46, 1987.Google Scholar
- 6.K. M. Cham, H. S. Fu, and Y. Nishi. “The dependence of hot-carrier degradation on AC stress waveforms.” IRPS ‘88, pp. 30–33, 1988.Google Scholar
- 7.T.-C. Ong, K. Seki, P. K. Ko, and C. Hu. “Hot-carrier-induced degradation in p-MOSFETs under AC stress.” IEEE Elec. Dev. Lett., vol. EDL-9, pp. 211–213, 1988.CrossRefGoogle Scholar
- 8.K.-L. Chen, S. Sailer, and R. Shah. “The case of AC stress in the hot-carrier effect.” IEEE Trans. Elec. Dev., vol. ED-33, pp. 424–426, 1986.CrossRefGoogle Scholar
- 9.J. Y. Choi, P. K. Ko, and C. Hu. “Hot-carrier-induced MOSFET degradation under AC stress.” IEEE Elec. Dev. Lett., vol. EDL-8, pp. 333–335, 1987.CrossRefGoogle Scholar
- 10.M. M. Kuo, K. Seki, P. M. Lee, J. Y. Choi, P. K. Ko, and C. Hu. “Simulation of MOSFET lifetime and AC hot-electron stress.” IEEE Trans. Elec. Dev., vol. 35, pp. 1004–1011, 1988.CrossRefGoogle Scholar
- 11.R. Bellens, P. Heremans, G. Groeseneken, and H. E. Maes. “Analysis of hot-carrier degradation in AC stressed n-channel MOS transistors using the charge-pumping technique.” J. de Physique, vol. 49, pp. C4–651-654, 1988.Google Scholar
- 12.R. Bellens, P. Heremans, G. Groeseneken, and H. E. Maes. “Analysis of mechanisms for the enhanced degradation during AC hot-carrier stress of MOSFETs.” IEDM Tech. Dig., pp. 212–215, 1988.Google Scholar
- 13.M. Aoki, K. Yano, T. Masuhara, and K. Komiyaji. “Hot-carrier effects under pulsed stress in CMOS devices.” Proc. VLSI Symp., pp. 49–50, 1987.Google Scholar
- 14.H. Wang, M. Davis, and R. Lahri. “Transient substrate current effect on n-channel MOSFET device lifetime. IEDM Tech. Dig., pp. 216–219, 1988.Google Scholar
- 15.T. Horiuchi, H. Mikoshiba, K. Nakamura, and K. Hamano. “A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress.” IEEE Elec. Dev. Lett., vol. EDL-7, pp. 337–339, 1986.CrossRefGoogle Scholar
- 16.W. Weber and I. Borchert. “Hot hole and electron effects in dynamically stressed n-MOSFETs.” Proc. of the 19th ESSDERC ‘89, Springer-Verlag, Berlin, pp. 719–722, 1989.Google Scholar
- 17.K. Mistry and B. Doyle, “The role of electron trap creation in enhanced hot-carrier degradation during AC stress.” IEEE Elec. Dev. Lett., vol. EDL-11, No. 6, pp. 267–269, 1990.CrossRefGoogle Scholar
- 18.W. Hänsch and W. Weber. “The effect of transients on hot carriers.” IEEE Elec. Dev. Lett., vol. 10, pp. 252–254, 1989.CrossRefGoogle Scholar
- 19.W. Weber. “Degradation behavior of dynamically stressed n-MOSFETs.” IEEE Trans. Elec. Dev., vol. ED-32, pp. 2543–2544, 1985.CrossRefGoogle Scholar
- 20.R. Bellens, P. Heremans, G. Groeseneken, H. E. Maes, and W. Weber. “The influence of the measurement setup on enhanced AC hot-carrier degradation of MOSFETs.” IEEE Trans. Elec. Dev., vol. ED-37, pp. 310–313, 1990.CrossRefGoogle Scholar
- 21.G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker. “A reliable approach to charge-pumping measurements in MOS transistors.” IEEE Trans. Elec. Dev., vol. ED-31, pp. 42–53, 1984.CrossRefGoogle Scholar
- 22.S. Selberherr. “MOS device modeling at 77K.” IEEE Trans. Elec. Dev., vol. 36, pp. 1464–1474, 1989.CrossRefGoogle Scholar
- 23.F. B. McLean, H. E. Boesch, and T. R. Oldham. “Electron-hole generation, transport and trapping in SiO
_{2}.” In*Ionizing Radiation Effects in MOS Devices and Circuits.*T. P. Ma and P. V. Dressendorfer (eds.), pp. 87–191. John Wiley, New York, 1989.Google Scholar - 24.R. C. Hughes. “Charge-carrier transport phenomena in amorphous SiO
_{2}: Direct measurement of the drift mobility and lifetime.” Phys. Rev. Lett., vol. 30, pp. 1333–1336, 1973.CrossRefGoogle Scholar - 25.R. C. Hughes. “Time-resolved hole transport in a-SiO
_{2}.” Phys. Rev. B, vol. 15, pp. 2012–2020, 1977.CrossRefGoogle Scholar - 26.R. C. Hughes. “High field electronic properties of SiO
_{2}.” Sol. State Elec, vol. 21, pp. 251–258, 1978.CrossRefGoogle Scholar - 27.M. Brox and W. Weber. “Annealing of fixed oxide charge induced by hot-carrier stressing.” Proc. ESSDERC’90, pp. 295–298, 1990.Google Scholar
- 28.E. Takeda and N. Suzuki. “An empirical model for device degradation due to hot-carrier injection.” IEEE Elec. Dev. Lett., vol. EDL-4, pp. 111–113, 1983.CrossRefGoogle Scholar
- 29.C. Hu, S. C. Tarn, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill. “Hot-electron-induced MOSFET degradation—Model, monitor, and improvement.” IEEE Trans. Elec. Dev., vol. ED-32, pp. 375–385, 1985.Google Scholar
- 30.W. Weber, Q. Wang, M. Brox, and D. Schmitt-Landsiedel. “Hot-carrier degradation effects relevant in real operation of MOSFETs.” Proc. SSDM 1990, pp. 295–298, 1990.Google Scholar
- 31.W. Weber, L. Risch, W. Krautschneider, and Q. Wang. “Hot-carrier degradation of CMOS-inverters.” IEDM Tech. Dig., pp. 208–211, 1988.Google Scholar
- 32.J. Winnerl, A. Lill, D. Schmitt-Landsiedel, M. Orlowski, and F. Neppl. “Influence of transistor degradation on CMOS performance and impact on lifetime criterion.” IEDM Tech. Dig., pp. 204–207, 1988.Google Scholar
- 33.K. Mistry, and B. Doyle. “Hot-carrier degradation in n-MOSFETs used as pass transistors.” IEEE Trans. Elec. Dev., vol. ED-37, pp. 2415–2416, 1990.CrossRefGoogle Scholar
- 34.H.-M- Mühlhoff, P. Murkin, M. Orlowski, W. Weber, K. H. Küsters, W. Müller, C. M. Rogers, and H. Wendt. “Sub-micron p-MOSFETs under static and swap stress.” VLSI Symp., pp. 57–58, 1987.Google Scholar

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© Van Nostrand Reinhold 1992