Abstract
Calculations of the resistivity fluctuation Δρ/\(\overline \rho\) as a function of compensation ratio in NTD-Si are presented which are valid near exact compensation. These calculations are compared with experimental data taken on silicon which has been compensated by the NTD process to resistivities as high as 100,000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a function of the initial starting material resistivity fluctuation.
Sponsored in part by Air Force Materials Laboratory, Air Force Systems Command, United States Air Force, Wright-Patterson AFB, Ohio 45433 under Contract No. F33615–76-C-5230.
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© 1979 Plenum Press, New York
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Meese, J.M., Glairon, P.J. (1979). Resistivity Fluctuations in Highly Compensated NTD Silicon. In: Meese, J.M. (eds) Neutron Transmutation Doping in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8249-2_9
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DOI: https://doi.org/10.1007/978-1-4684-8249-2_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-8251-5
Online ISBN: 978-1-4684-8249-2
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