Resistivity Fluctuations in Highly Compensated NTD Silicon

  • J. M. Meese
  • Paul J. Glairon


Calculations of the resistivity fluctuation Δρ/\(\overline \rho\) as a function of compensation ratio in NTD-Si are presented which are valid near exact compensation. These calculations are compared with experimental data taken on silicon which has been compensated by the NTD process to resistivities as high as 100,000 Ω-cm. Calculations are also presented of the maximum possible mean resistivity obtainable before fluctuation induced type conversion occurs as a function of the initial starting material resistivity fluctuation.


Boron Concentration Initial Resistivity Maximum Resistivity Compensation Ratio Transmutation Doping 


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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • J. M. Meese
    • 1
    • 2
  • Paul J. Glairon
    • 1
    • 3
  1. 1.University of Missouri Research Reactor ColumbiaUSA
  2. 2.Department of PhysicsUniversity of Missouri-ColumbiaUSA
  3. 3.Department of Electrical EngineeringUniversity of Missouri-ColumbiaUSA

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