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Role of Neutron Transmutation in the Development of High Sensitivity Extrinsic Silicon IR Detector Material

  • H. M. Hobgood
  • T. T. Braggins
  • J. C. Swartz
  • R. N. Thomas

Abstract

The monolithic CCD type sensors, which are currently under development for high performance infrared detection and imaging systems, utilize extrinsic indium or gallium doped silicon substrates. Considerations of detector operating temperature and sensitivity require that residual shallow acceptor impurities, such as boron, in these highly doped silicon substrates be compensated as closely as possible by donor impurities. Highly uniform and accurately known phosphorus concentrations can be introduced into the silicon lattice by neutron transmutation, making the technique attractive for producing precisely compensated, p-extrinsic silicon detector material of high infrared sensitivity.

Keywords

Detector Material Float Zone High Responsivity Shallow Acceptor Neutron Transmutation Doping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • H. M. Hobgood
    • 1
  • T. T. Braggins
    • 1
  • J. C. Swartz
    • 1
  • R. N. Thomas
    • 1
  1. 1.Westinghouse Research and Development CenterPittsburghUSA

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