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Application of NTD Silicon for Power Devices

  • Hans Mork Janus

Abstract

Industrial application and manufacturing of neutron doped silicon was initiated in large scale in 1975. Since then the range of applications has been widened drastically in concordance with the usual price pattern of semiconductor products.

The yield impact in the device industry has completely changed the projected float zone silicon consumption for at least the next five years.

A survey of these phenomena is presented.

Keywords

Breakdown Voltage Center Resistivity Power Device Float Zone Power Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • Hans Mork Janus
    • 1
  1. 1.Topsil A/SFrederikssundDenmark

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