Application of NTD Silicon for Power Devices
Industrial application and manufacturing of neutron doped silicon was initiated in large scale in 1975. Since then the range of applications has been widened drastically in concordance with the usual price pattern of semiconductor products.
The yield impact in the device industry has completely changed the projected float zone silicon consumption for at least the next five years.
A survey of these phenomena is presented.
KeywordsBreakdown Voltage Center Resistivity Power Device Float Zone Power Transistor
Unable to display preview. Download preview PDF.