Isochronal Annealing of Resistivity in Float Zone and Czochralski NTD Silicon

  • Paul J. Glairon
  • J. M. Meese


Resistivity and thermal probe measurements have been used to characterize the isochronal annealing, type conversion, and phosphorus electrical activation of NTD-Si over the temperature range of 20 to 850°C in undoped float zone and pulled silicon. Similar experiments are reported for Ga doped float zone for [P]/[B] ratios of 1 to 3. The annealing associated with fast neutron damage has been isolated using boron shielding during irradiation. The effects of β- recoil damage have been isolated by rapid pre-annealing to 850°C before appreciable 31Si → 31P + β- decay had occurred. Type conversion annealing peaks (p → n) occur at 650–750°C in NTD float zone, at 400°C in NTD Czochralski and at 350°C (n → p) in β- recoil damaged silicon. A dominate acceptor defect dominates the conductivity in the annealing temperature range of 575–650°C in both float zone and Czochralski. Several reverse annealing peaks from 20–550°C are also observed in most samples and heavily irradiated float zone exhibits many annealing features similar to Czochralski.


Boron Concentration Isochronal Annealing Neutron Dose Type Conversion Float Zone 
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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • Paul J. Glairon
    • 1
  • J. M. Meese
    • 1
  1. 1.Research Reactor FacilityUniversity of MissouriColumbiaUSA

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