Defect Annealing Studies in Neutron Transmutation Doped Silicon

  • B. C. Larson
  • R. T. Young
  • J. Narayan


Electrical, optical, x-ray and electron microscopy techniques have been used to investigate lattice damage and annealing in NTD silicon. Dislocation loops of 10–100 Â diameter were identified in both the as irradiated state and after thermal anneals of up to 900°C by the electron microscopy and x-ray techniques. A correlation of these results with the infrared absorption and electron mobility recovery stage between 600 and 750°C suggests that defects < 10 A are also contributing to the recovery processes at this temperature.


Dislocation Loop Diffuse Scattering Neutron Fluences Loop Size Electron Microscopy Result 
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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • B. C. Larson
    • 1
  • R. T. Young
    • 1
  • J. Narayan
    • 1
  1. 1.Solid State DivisionOak Ridge National LaboratoryOak RidgeUSA

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