Defect Annealing Studies in Neutron Transmutation Doped Silicon
Electrical, optical, x-ray and electron microscopy techniques have been used to investigate lattice damage and annealing in NTD silicon. Dislocation loops of 10–100 Â diameter were identified in both the as irradiated state and after thermal anneals of up to 900°C by the electron microscopy and x-ray techniques. A correlation of these results with the infrared absorption and electron mobility recovery stage between 600 and 750°C suggests that defects < 10 A are also contributing to the recovery processes at this temperature.
KeywordsDislocation Loop Diffuse Scattering Neutron Fluences Loop Size Electron Microscopy Result
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