Abstract
Electrical, optical, x-ray and electron microscopy techniques have been used to investigate lattice damage and annealing in NTD silicon. Dislocation loops of 10–100 Â diameter were identified in both the as irradiated state and after thermal anneals of up to 900°C by the electron microscopy and x-ray techniques. A correlation of these results with the infrared absorption and electron mobility recovery stage between 600 and 750°C suggests that defects < 10 A are also contributing to the recovery processes at this temperature.
Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with the Union Carbide Corporation.
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© 1979 Plenum Press, New York
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Larson, B.C., Young, R.T., Narayan, J. (1979). Defect Annealing Studies in Neutron Transmutation Doped Silicon. In: Meese, J.M. (eds) Neutron Transmutation Doping in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8249-2_21
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DOI: https://doi.org/10.1007/978-1-4684-8249-2_21
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