Electrical Property Studies of Neutron Transmutation Doped Silicon
Irradiation of semiconducting materials in a nuclear reactor1 was initiated about 30 years ago at the Oak Ridge National Laboratory (ORNL). The primary interest at that time was the study of radiation damage effects, but transmutation doping was used to determine isotopic cross sections, introduce a known dopant concentration, and study impurity banding effects. Research on neutron transmutation doped (NTD) silicon was resumed at ORNL approximately four years ago. In this paper results of several studies of electrical properties conducted since then will be reviewed and discussed.
KeywordsDonor Concentration Neutron Fluence Minority Carrier Lifetime Float Zone Oxygen Cluster
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