Atomic Displacement Effects in Neutron Transmutation Doping

  • H. J. Stein


The production of defects in silicon by neutron irradiation and the effects of subsequent thermal annealing are reviewed for their impact on neutron transmutation doping. Recoiling atoms from fast neutron interactions are the dominant contribution to the energy available for producing atomic displacements. Energy deposition considerations indicate that defect clusters are created but amorphous zone formation is highly unlikely. Extensive defect reordering occurs at room temperature with resultant vacancy- vacancy, vacancy-impurity, interstitial-insterstitial, and interstitial-impurity interactions. Many irradiation-produced defects have been characterized and identified for annealing temperatures < 500°C, and the role of impurities is pervasive. For temperatures near 500°C defect evolution processes yield vacancy and interstitial loops with impurities still participating. Additional work is needed to more fully characterize and identify residual lattice imperfections which remain in irradiated silicon after annealing to temperatures > 500°C, and to understand the interaction processes in their formation. Although the concentrations of residual defects are relatively low, these residual defects are of primary importance for neutron transmutation doping and also for ion implantation.


Fast Neutron Neutron Irradiation Defect Cluster Isochronal Annealing Residual Defect 
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Copyright information

© Plenum Press, New York 1979

Authors and Affiliations

  • H. J. Stein
    • 1
    • 2
  1. 1.Sandia LaboratoriesAlbuquerqueUSA
  2. 2.U.S. Department of Energy FacilityUSA

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