Relationship Between Densification and High Temperature Mechanical Properties of HIPed Silicon Nitride
The higher pressures available in the HIP process permit the fabrication of yttria-based silicon nitride that cannot be prepared by conventional ceramic processing. Since both the densification and high temperature properties of silicon nitride are controlled by a similar mechanism the slow rate of densification in HIPed silicon nitride corresponds to lower creep rates and subcritical crack growth rates than in other additive-based silicon nitrides.
KeywordsCreep Rate Silicon Nitride Liquid Phase Sinter Slow Crack Growth Steady State Creep Rate
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