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Microhardness of N-Implanted Yttria Stabilized ZrO2

  • J. K. Cochran
  • K. O. Legg
  • G. R. Baldau
Part of the Materials Science Research book series (MSR, volume 17)

Abstract

Cubic ZrO2 stabilized with 9.8 m/o yttria was implanted with 50 keV nitrogen ions at dose levels 1015 to 3 × 10-2 cm. Microhardness measurements indicated hardness increases up to 3 × 10 N cm at low indenter loads for unannealed crystals but no hardness change occurred for annealed samples. At f=3 × 1016 N+ cm-2, a critical dose was exceeded resulting in softening of both annealed and unannealed films. Exceeding this critical dose resulted in shearing of the implanted film due to compressive strain, as evidenced by blistering and chipping at indentation edges. The sheared film thickness was 1300 Å. Sputter Auger profiles indicated constant N concentration from 150 to 1300 Å rather than the expected Gaussian distribution. Stress induced diffusion was thought responsible for the square profile.

Keywords

Auger Spectrum Critical Dose Unannealed Sample Indentation Edge Zirconia Single Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • J. K. Cochran
    • 1
  • K. O. Legg
    • 1
  • G. R. Baldau
    • 1
  1. 1.Georgia Institute of TechnologyAtlantaUSA

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