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Ionized-Cluster Beam Deposition and Epitaxy

  • Toshinori Takagi
Part of the Materials Science Research book series (MSR, volume 17)

Abstract

The ionized cluster beam (ICB) deposition and epitaxial process is an ion-assisted technique by which high quality films of metals, dielectrics and active semiconductor materials can be formed at a low substrate temperature in a technical-grade vacuum system. In the ICB process, film material is vaporized from a confinement crucible under conditions which result in the formation of aggregate clusters of atoms held together by weak forces. Clusters can be ionized by electron impact and subsequently accelerated by high potentials. Through selection of available parameters, it is possible to control the average energy of depositing species over the range from thermal ejection to above 100 eV per atom. It is within this range that optimum conditions for film growth are generally achieved. In the ICB deposition, characteristics of the deposition are mainly caused by both the structural characteristic of the clusters and the effects of ionization and acceleration of the clusters.

Keywords

Acceleration Voltage Seebeck Coefficient Cluster Beam Ionize Cluster Beam High Seebeck Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Toshinori Takagi
    • 1
  1. 1.Ion Beam Engineering Experimental LaboratoryKyoto UniversitySakyo, Kyoto 606Japan

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