Ion Beam Techniques for the Deposition of Ceramic Thin Films
Broad-beam multiaperture ion sources are capable of generating collimated ion beams of narrow energy spread and high flux at low background pressure. These features allow the preparation of compound thin films under highly controlled conditions. The operation of broad-beam ion sources is summarized, followed by two examples of compound formation using ion beams: surface compound layer formation (e.g., ion beam oxidation of Ni); and reactive compound deposition (e.g., dual ion beam deposition of Si3N4). In each case, the quantitative information inherent in the ion beam technique adds to the understanding and control of the film growth environment. Areas of ion source development are also discussed.
KeywordsCeramic Thin Film Compound Thin Film Surface Compound Layer Narrow Energy Spread Discharge Plasma Region
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