A Morphological Study of Silicon Carbide Prepared by Chemical Vapor Deposition

  • P. Tsui
  • K. E. Spear
Part of the Materials Science Research book series (MSR, volume 17)


Surface morphologies of SiC deposits obtained via chemical vapor deposition (CVD) were studied as functions of substrate surface temperature and the concentration of the silicon and carbon source material, methyltrichlorosilane (MTS).Substrates of graphite and α-SiC crystals were used. Explanations of the observed morphologies on graphite substrates and their marked changes with temperature are given in terms of chemical kinetics and mass transport arguments. The results of thermodynamic calculations were used to help explain the observed morphologies of the deposits on α-SiC substrates.


Chemical Vapor Deposition Silicon Carbide Graphite Substrate Chemical Vapor Deposition Reactor Deposit Morphology 
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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • P. Tsui
    • 1
  • K. E. Spear
    • 1
  1. 1.Materials Research LaboratoryThe Pennsylvania State UniversityUniversity ParkUSA

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