Preparation of Amorphous Si3N4-BN Composites by Chemical Vapor Deposition

  • Toshio Hirai
  • Takashi Goto
  • Tadashi Sakai
Part of the Materials Science Research book series (MSR, volume 17)


Chemical vapor deposition of an Si-N-B system has been studied by using SiCl4, NH3, and B2H6 as source gases at deposition temperatures of 11000 to 1300°C and total gas pressures of 30 to 70 Torr.The chemical composition and density of the deposits were measured. The structure of the deposits was investigated by X-ray diffraction and IR absorption techniques. The deposits were composed of amorphous Si3N4 and turbostratic BN.


Chemical Vapor Deposition Silicon Content Boron Content Graphite Substrate High Boron Content 
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Copyright information

© Plenum Press, New York 1984

Authors and Affiliations

  • Toshio Hirai
    • 1
  • Takashi Goto
    • 1
  • Tadashi Sakai
    • 1
  1. 1.The Research Institute for Iron, Steel and Other MetalsTohoku UniversityKatahira, Sendai 980Japan

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