Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory
In the theory of the relaxation processes taking place in semiconductors under nonequilibrium conditions, it is usual to employ a basic characteristic in the form of the minority-carrier lifetime or, in the case of an n-type semiconductor, the hole lifetime τp.
KeywordsTransient Process Capture Cross Section Recombination Center Trapping Center Injection Level
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