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Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory

  • Yurii R. Nosov
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 4)

Abstract

In the theory of the relaxation processes taking place in semiconductors under nonequilibrium conditions, it is usual to employ a basic characteristic in the form of the minority-carrier lifetime or, in the case of an n-type semiconductor, the hole lifetime τp.

Keywords

Transient Process Capture Cross Section Recombination Center Trapping Center Injection Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1969

Authors and Affiliations

  • Yurii R. Nosov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteLeningradUSSR

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