Transient Processes in Diodes During the Passage of a Forward Current Pulse

  • Yurii R. Nosov
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 4)


We have established that when a forward bias is applied to a diode, an equilibrium distribution of free carriers in the base is not established instantaneously but after a certain time interval.


Current Pulse Voltage Drop Transient Process Base Resistance Hole Density 
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Copyright information

© Plenum Press, New York 1969

Authors and Affiliations

  • Yurii R. Nosov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteLeningradUSSR

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