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Transient Processes in a Diode with a Small-Area Rectifying Contact

  • Yurii R. Nosov
Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 4)

Abstract

The earliest experimental investigations of transient processes in semiconductor devices were carried out on point-contact germanium diodes [91–95]. The reduction of the reverse resistance under pulse conditions and the decrease of the rectified current with increasing frequency were observed for these diodes. The first explanations of the experimentally observed strong peaks of the reverse current correctly attributed these peaks to the injection of holes into the base during the flow of the forward current and the return of these holes to the contact when a reverse voltage was applied. Meacham and Michaels [92] introduced the term “charge storage” to describe an increase in the hole density in the base due to the injection of holes by the p-n junction.

Keywords

Transient Process Surface Recombination Reverse Current Hole Density Reverse Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1969

Authors and Affiliations

  • Yurii R. Nosov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteLeningradUSSR

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