Planar Diode with a Thin Base
In many types of planar semiconductor diode, the assumption of an infinitely thick base is not satisfied. A parallel ohmic contact with the n-type region is usually located in the immediate vicinity of a p-n junction and the base resistance is reduced by the shortening of the distance between this contact and the rectifying p-n junction. In those cases when the distance between the p-n junction and the ohmic contact is comparable with the hole diffusion length, the presence of such a contact alters the process of accumulation and dispersal of the excess charge and, consequently, the nature of the transient processes which accompany the switching of such a diode.
KeywordsNickel Phosphorus Recombination Boron Sine
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