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Diffusion

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Treatise on Solid State Chemistry

Abstract

In Volumes 1 and 2 of this treatise detailed accounts have been given of the various types of defects that occur in solids. We are particularly concerned in this chapter with the point defects because it is to their mobility that the phenomenon of diffusion in solids is largely due. The most important of the point defects in this connection are vacancies and interstitials and more complex types derived from these, such as divacancies, split interstitials, etc. By processes of thermal activation, vacancies can migrate by exchanging places with neighboring atoms or ions. Similarly, interstitial atoms can migrate by moving from one interstitial site to another interstitial site. Alternatively, they can migrate by the interstitialcy mechanism whereby an interstitial atom moves onto a neighboring lattice site and displaces the atom on that site into another interstitial position. The net result of defect mobility, whether of vacancies or interstitials, is that the atoms of a solid are in a state of continual migration from site to site throughout the crystal. It follows that when there are variations in composition within a solid a relative mass transport can occur of the different types of atoms present which tends to level out these variations, and it is this process that we call “diffusion.”

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Authors and Affiliations

  1. Atomic Energy Research Establishment, Harwell, England

    A. D. Le Claire

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  1. Research and Patents, Bell Laboratories, Murray Hill, New Jersey, USA

    N. B. Hannay (Vice President) (Vice President)

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Le Claire, A.D. (1976). Diffusion. In: Hannay, N.B. (eds) Treatise on Solid State Chemistry. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-8082-5_1

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  • DOI: https://doi.org/10.1007/978-1-4684-8082-5_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-8084-9

  • Online ISBN: 978-1-4684-8082-5

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