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Growth of Thin Films by Ion Beam Sputtering: Study of Rare Gas Incorporation

  • C. Desgranges
  • C. Pellet
  • C. Schwebel
  • A. Chabrier
  • G. Gautherin
Part of the Nato ASI Series book series (NSSB, volume 271)

Abstract

This paper reports the results on a study of rare-gas incorporation in films deposited by ion beam sputter deposition (IBSD). It has been observed that electrical properties of metallic and semiconductor films depend on the nature and concentration of rare gas trapped in the layers. The origin of this rare gas is discussed. Angular distributions of rare gas emitted from a sputtered target are shown.

Keywords

Angular Distribution Semiconductor Film Silicon Target Tungsten Film Perfect Crystalline Structure 
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References

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • C. Desgranges
    • 1
  • C. Pellet
    • 1
  • C. Schwebel
    • 1
  • A. Chabrier
    • 1
  • G. Gautherin
    • 1
  1. 1.Institut d’Electronique Fondamentale, Unité associée au CNRS (U.R.A.D022)Université Paris XIOrsay CedexFrance

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