Growth of Thin Films by Ion Beam Sputtering: Study of Rare Gas Incorporation
This paper reports the results on a study of rare-gas incorporation in films deposited by ion beam sputter deposition (IBSD). It has been observed that electrical properties of metallic and semiconductor films depend on the nature and concentration of rare gas trapped in the layers. The origin of this rare gas is discussed. Angular distributions of rare gas emitted from a sputtered target are shown.
KeywordsAngular Distribution Semiconductor Film Silicon Target Tungsten Film Perfect Crystalline Structure
Unable to display preview. Download preview PDF.
- 1.C. Shwebel, F. Meyer, G. Gautherin and C. Pellet, J. Vac. Sci. Technol. B4 (1986) 1153.Google Scholar
- 5.C. Schwebel, C. Pellet and G. Gautherin, Nucl. Instr. and Meth. B18 (1987) 525.Google Scholar
- 6.H.H. Andersen and H.L. Bay, Topics in Applied Physics 47 (R. Behrisch, ed., Sputtering by Particle Bombardment, Springer Berlin (1981).Google Scholar