Ion-Induced Auger Electron Emission From Single Crystals: Experiment and Simulation
The energy spectra of the Si KLL and KLM Auger electrons produced by bombardment of a Si (100) single crystal with a 1 MeV He+ beam, are measured. The incident beam is aligned with a major crystallographic direction or with a random direction. The shapes of the measured Auger spectra are successfully explained using an efficient Monte Carlo simulation code for the electron transport. Different models for the energy loss distribution are compared with each other. In the comparison with the experiment, the local density approximation of the dielectric response model for the inelastic scattering cross section and the quantum mechanical phase-shift model for the elastic scattering cross section are used. The experiments and the Monte Carlo simulations show an enhancement of the spectral intensity within 150 eV of the initial Auger electron energy. The enhancement is caused by a reduction of the effective stopping power for the majority of the electrons created in the surface region.
KeywordsEnergy Loss Elastic Scattering Auger Electron Spectral Intensity Full Curve
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