Die Stress Measurement Using Piezoresistive Stress Sensors

  • James N. Sweet


The in-situ measurement of mechanical stress in microelectronics packages has become desirable in recent years as a result of evolving packaging technology. In the case of integrated circuit (IC) packages, stress can be produced either through the die attachment process or through encapsulation in a molding material. In the case of chip-on-board (COB) packaging, stress can be produced by the chip coating used to protect the IC against handling damage and chemical attack. As die sizes have increased, stresses from these sources have steadily grown in magnitude, resulting in such phenomena as die cracking or shear stress-induced breakage of the die passivation and metal conductors under the passivation. In order to quantitatively determine the stress magnitudes in a packaged IC it is desirable to have a test device that can simulate the actual IC chip as closely as possible.


Gage Factor Doping Density Stress Tensor Component Stress Sensor Test Chip 
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  1. 1.
    Smith, C. S., “Piezoresistance Effect in Germanium and Silicon,” Phys. Rev., 94, 1956, p. 42.CrossRefGoogle Scholar
  2. 2.
    Mason, W. P., and R. N. Thurston, “Use of Piezoresistive Materials in the Measurement of Displacement, Force, and Torque,” J. Acoustical Soc. Am., 29, 1957, p. 1096.CrossRefGoogle Scholar
  3. 3.
    Pfann, W. G., and R. N. Thurston, “Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects,” J. Appl. Phys., 32, 1961, p. 2008.CrossRefGoogle Scholar
  4. 4.
    Tufte, O. N., and E. L. Stelzer, “Piezoresistive Properties of Silicon Diffused Layers,” J. Appl. Phys., 34, 1963, p. 313.CrossRefGoogle Scholar
  5. 5.
    Spencer, J. L., W. H. Schroen, G. A. Bednarz, J. A. Bryan, T. D. Metzgar, R. D. Cleveland, and D. R. Edwards, “New Quantitative Measurements of IC Stress Introduced by Plastic Packages,” Proc. 19th Annual Reliability Physics Symposium, 1981, pp. 74–80.Google Scholar
  6. 6.
    Landau, L. D., and E. M. Lifshitz, Electrodynamics of Continuous Media, Pergamon Press, Oxford, 1984, pp. 86–88.Google Scholar
  7. 7.
    Ashcroft, N. W., and N. D. Mermin, Solid State Physics, Holt, Rinehart and Winston, New York, 1976, pp. 250–251.Google Scholar
  8. 8.
    Bittle, D. A., J. C. Suhling, R. E. Beaty, R. C. Jaeger, and R. W. Johnson, “Piezoresistive Stress Sensors for Structural Analysis of Electronic Packages,” J. Electronic Packaging, 113, 1991, p. 203.CrossRefGoogle Scholar
  9. 9.
    Landau, L. D., and E. M. Lifshitz, Theory of Elasticity, Addison Wesley, Reading, MA, 1959, pp. 36–41.Google Scholar
  10. 10.
    Smith, C. S., “Macroscopic Symmetry and Properties of Crystals,” Solid State Physics, Vol. 6, F. Seitz and D. Turnbull, eds. Academic Press, New York, 1958, pp. 175–249.Google Scholar
  11. 11.
    Middelhoek, S., and S. A. Audet, Silicon Sensors, Academic Press, New York, 1989, pp. 105–151.Google Scholar
  12. 12.
    Kanda, Y., “A Graphical Representation of the Piezoresistance Coefficients in Silicon,” IEEE Trans. Electronic Devices, ED-29, 1982, p. 64.Google Scholar
  13. 13.
    Goldstein, H., Classical Mechanics, 2d edn., Addison Wesley, Reading, MA, 1981, pp. 128–148.Google Scholar
  14. 14.
    Thurston, R. N., “Use of Semiconductor Transducers in Measuring Strains, Accelerations, and Displacements,” Physical Acoustics, Vol. I, Part B, W. P. Mason, ed., Academic Press, New York, 1964, pp. 215–235.Google Scholar
  15. 15.
    Sze, S. M., Physics of Semiconductor Devices, 2d edn., Wiley, New York, 1981, pp. 12–16.Google Scholar
  16. 16.
    Chelikowsky, J. R., and M. L. Cohen, “Nonlocal Pseudopotential Calculations for the Electronic Structure of Eleven Diamond and Zinc-Blende Semiconductors,” Phys. Rev., B14, 1976, p. 556.CrossRefGoogle Scholar
  17. 17.
    Herring, C., “Transport Properties of a Many-Valley Semiconductor,” Bell System Technical J, 34, 1955, p. 237.Google Scholar
  18. 18.
    Herring, C., and E. Vogt, “Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering,” Phys. Rev., 101, 1956, p. 944.CrossRefGoogle Scholar
  19. 19.
    Keyes, R. W., “The Effects of Elastic Deformation on the Electrical Conductivity of Semiconductors,” Solid State Physics, Vol. 11, F. Seitz and D. Turnbull, eds., Academic Press, New York, 1960, pp. 149–221.Google Scholar
  20. 20.
    Tufte, O. N., and E. L. Stelzer, “Piezoresistive Properties of Heavily Doped n-Type Silicon,” Phys. Rev., 133A, 1964, p. 1705.CrossRefGoogle Scholar
  21. 21.
    Ref. 7, pp. 36–37.Google Scholar
  22. 22.
    Boer, K. W., Survey of Semiconductor Physics, Van Nostrand Reinhold, New York, 1990, pp. 210–222.CrossRefGoogle Scholar
  23. 23.
    Jaeger, R. J., Introduction to Microelectronic Fabrication, Vol. V in Modular Series on Solid State Devices, G. W. Neudeck and R. F. Pierret, eds., Addison Wesley, Reading MA, 1988, pp. 49–62.Google Scholar
  24. 24.
    Miura, H., A. Nishimura, S. Kawai, and K. Nishi, “Development and Application of the Stress Sensing Test Chip for IC Plastic Packages,” Proc. 64th Annual Meeting of the Japanese Society of Mechanical Engineers, pp. 1826–1832.Google Scholar
  25. 25.
    Natarajan, B., and B. Bhattacharyya, “Die Surface Stresses in a Molded Plastic Package,” Proc. 36th Electronic Components Conference, IEEE, 1986, pp. 544–551.Google Scholar
  26. 26.
    Lundström, P., and K. Gustafsson, “Mechanical Stress and Life for Plastic-Encapsulated Large Area Chip,” Proc. 38th Electronic Component and Technology Conference, IEEE, 1988, pp. 396–405.Google Scholar
  27. 27.
    Beaty, R. E., J. C. Suhling, C. A. Moody, D. A. Bittle, R. W. Johnson, R. D. Butler, and R. C. Jaeger, “Calibration Consideratons for Piezoresistive-based Stress Sensors,” Proc. 40th Electronic Component and Technology Conference, IEEE, 1990, pp. 797–806 and “Piezoresistive Coefficient Variation in Silicon Stress Sensors Using a Four-Point Bend Text Fixture,” IEEE Trans. Components, Hybrids, Manuf. Technol., CHMT-15, 1992, p. 904.Google Scholar
  28. 28.
    Sze, S. M., Semiconductor Technology,2d edn., McGraw-Hill, New York, 1988, Chap. 11.Google Scholar
  29. 29.
    Beadle, W. E., J. C. C. Tsai, and R. D. Plummer, Quick Reference Manual for Silicon Integrated Circuit Technology, Wiley, New York, 1985, pp. 4–10.Google Scholar
  30. 30.
    Beck, J. V., and K. J. Arnold, Parameter Estimation in Engineering and Science, Wiley, New York, 1977.Google Scholar
  31. 31.
    Thurston, R. N., “Use of Semiconductor Transducers,” Physical Acoustics, Vol. 1 Part B, W. P. Mason, ed., Academic Press, New York, 1964, pp. 215–235.Google Scholar
  32. 32.
    Gee, S. A., V. R. Akylas, and W. F. van den Bogert, “The Design and Calibration of a Semiconductor Strain Gauge Array,” 1988 IEEE Proc. Microelectronic Test Structures., IEEE, 1988, pp. 185–191.Google Scholar
  33. 33.
    Grove, A. S., Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, pp. 321–324.Google Scholar
  34. 34.
    Suhling, J. C., M. T. Carey, R. W. Johnson, and R. C. Jaeger, “Stress Measurement in Microelectronic Packages Subjected to High Temperatures,” ASME Winter Annual Meeting, Dec. 1991, ASME publication AMD-Vol. 131/EEP-Vol. 1, Manufacturing Processes and Materials Challenges in Microelectronic Packaging, ASME, 1991, pp. 143–152.Google Scholar
  35. 35.
    Sweet, J. N., M. R. Tuck, D. W. Peterson, and D. W. Palmer, “Short and Long Loop Manufacturing Feedback Using a Multisensor Assembly Test Chip,” IEEE Trans. Components, Hybrids, Manuf. Technol., CHMT-14, 1991, p. 529.Google Scholar
  36. 36.
    Bastawros, A. F., and A. S. Vososhin, “In-Situ Calibration of Stress Chips,” Proc. 40th Electronic Component and Technology Conference, IEEE, 1990, pp. 791795.Google Scholar
  37. 37.
    Suhir, E., “Thermal Stress Failures in Microelectronic Components—Review and Extension,” Advances in Thermal Modeling of Electronic Components, Vol. 1, A. Bar-Cohen and A. D. Krans, eds., Hemisphere Publishing, New York, 1988, pp. 337–412.Google Scholar
  38. 38.
    van Kassel, C. G. M., S. A. Gee, and J. J. Murphy, “The Quality of Die-Attachment and Its Relationship to Stresses and Vertical Die-Cracking,” IEEE Trans. Components, Hybrids, CHMT-6, 1983, p. 414.CrossRefGoogle Scholar
  39. 39.
    Groothuis, S., W. Schroen, and M. Murtuza, “Computer Aided Stress Modeling for Optimizing Plastic Package Reliability,” Proc. 23d Annual Reliability Physics Symposium, 1985, pp. 184–191.Google Scholar
  40. 40.
    Edwards, D. R., K. G. Heinen, S. K. Groothuis, and J. E. Martinez, “Shear Stress Evaluation of Plastic Packages,” IEEE Trans. Components, Hybrids, Manuf. Technol., CHMT-12, 1987, p. 618.CrossRefGoogle Scholar
  41. 41.
    Gee, S. A., W. F. van den Bogert, and V. R. Akylas, “Strain-Gauge Mapping of Die Surface Stresses,” IEEE Trans. Components, Hybrids, Manuf. Technol., CHMT-12, 1989, p. 587.Google Scholar
  42. 42.
    Miura, H., A. Nishimura, S. Kawai, and G. Murakami, “Structural Effect of IC Plastic Package on Residual Stress in Silicon Chips,” Proc. 40th Electronic Component and Technology Conference, IEEE, 1990, pp. 316–321.Google Scholar

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© Van Nostrand Reinhold 1993

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  • James N. Sweet

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