The Crystalline Perfection of Melt-Grown GaAs Substrates and Ga(As, P) Epitaxial Deposits

  • J. K. Howard
  • R. H. Cox
Conference paper


The preparation of semiconductor materials by epitaxial deposition has rapidly gained prominence in recent years. GaAs(1−x)P x alloys of variable composition, deposited on GaAs substrates, have been prepared in an open-tube reactor using H2, AsC13, and PC13 with GaAs source material. The deposits ranged in composition from GaAs to GaAs0.5P0.5 and were 10–30 microns thick.

X-ray diffraction topography was employed to evaluate the structural perfection of the monocrystalline GaAs substrates and the perfection of the deposited Ga(As, P) films. A scanning-reflection technique was developed to study the concentration, type, and spatial distribution of imperfections over large areas (~ 8 cm2) to depths of 25 microns. Some areas of investigation included (1) the polycrystallinity of some deposits, (2) the effect of substrate perfection on the film quality, (3) the depth of mechanically induced damage, and (4) the structural perfection of magnesium-diffused GaAs and Ga(As, P).


Strain Field GaAs Substrate Epitaxial Film Compositional Gradient Homogeneous Solid Solution 
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  1. 1.
    J. K. Howard and R. D. Dobrott, to be published.Google Scholar
  2. 2.
    W. W. Webb, “X-Ray Diffraction Topography,” in: J. B. Newkirk and J. H. Wernick (eds.) Direct Observation of Imperfections in Crystals, Interscience Publishers, Inc., New York, 1962, P. 29.Google Scholar
  3. 3.
    R. W. James, The Optical Principles of the Diffraction of X-Rays, Vol. II, Bell, London, 1958, p 294.Google Scholar
  4. 4.
    A. R. Lang, “Studies of Individual Dislocations in Crystals by X-Ray Diffraction Micro-radiography,” J. Appl. Phys. 30: 1748, 1959.CrossRefGoogle Scholar
  5. 5.
    U. Bonse, “Zur rontgenographischen Bestimmung des Typs einzelner Versetzungen in Emkristallen,” Z. Physik 153: 278–96, 1958.Google Scholar
  6. 6.
    J. B. Newkirk, “The Observation of Dislocations and Other Imperfections by X-Ray Extinction Contrast,” Trans. AIME 215: 483, 1959.Google Scholar
  7. 7.
    E. W. Williams, R. H Cox, and R. D. Dobrott, to be published.Google Scholar
  8. 8.
    W. F. Finch and E. W. Mehal, “Preparation of GaAsxPi-x by Vapor Phase Reaction,” J. Electrochem. Soc. 111: 815, 1964.CrossRefGoogle Scholar
  9. 9.
    G. E. Gottlieb, “Vapor Phase Transport and Epitaxial Growth of GaAsi-xPx Using Water Vapor,” J. Electrochem. Soc. 112: 192–6, 1965.CrossRefGoogle Scholar
  10. 10.
    M. Rubenstein, “The Preparation of Homogeneous and Reproducible Solid Solutions of GaP-GaAs,” J. Electrochem. Soc. 112: 426, 1965.CrossRefGoogle Scholar
  11. 11.
    G. R. Ante11, “Chlorine and Iodine as Impurities in InAs and GaP,” J. Appl. Phys. 31: 1686, 1960.CrossRefGoogle Scholar
  12. 12.
    San-Mei Ku, “The Preparation and Properties of Vapor-Grown GaAs-GaP Alloys,” J. Electrochem. Soc. 110: 991–5, 1963.CrossRefGoogle Scholar
  13. 13.
    E. M. Hull, “Epitaxial Growth of Homogeneous Solid Solutions of GaAs-GaP,” J. Electrochem. Soc. 111: 1295–6, 1964.CrossRefGoogle Scholar
  14. 14.
    M. S. Abrahams, “Dislocation Etch Pits in GaAs,” J. Appl. Phys. 35: 3626, 1964.CrossRefGoogle Scholar
  15. 15.
    M. Renniger, “Net Plane `Interferometry’ and Applications,” in: G. N. Ramachandran, Crystallography and Crystal Perfection, Academic Press, New York, 1963, p. 145.Google Scholar
  16. 16.
    A. Reisman and R. Rohr, “Room Temperature Chemical Polishing of Ge and GaAs,” J. Electrochem. Soc. 111: 1425–8, 1964.CrossRefGoogle Scholar
  17. 17.
    W. C. Dash, “Distorted Layers in Silicon Produced by Grinding and Polishing,” J. Appl. Phys. 29: 228–9, 1958.CrossRefGoogle Scholar
  18. 18.
    G. L. Cheney, private communicationGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1966

Authors and Affiliations

  • J. K. Howard
    • 1
  • R. H. Cox
    • 1
  1. 1.Texas Instruments IncorporatedDallasUSA

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