Recording and Energy Analysis of Low-Energy H1+, H2+, and He+ Ions by Means of Surface-Barrier Silicon Counters
Surface-barrier silicon counters have opened new possibilities of recording and analyzing charged and neutral particles emitted from a plasma [1, 2]. In the majority of cases, the energies of these particles do not exceed several tens of kiloelectronvolts. The H 1 + -ion energy below which the probability for the formation of an electron-hole pair in silicon is negligibly small amounts to about 0.25 keV (about 1 keV for He++) . Therefore, in principle, the energy threshold of counters used for the spectrometric analysis of particles is determined by the losses in the insensitive counter “window” and by the statistical fluctuations of the number of electron-hole pairs created by a single particle. The energy threshold can be very low (1–2 keV for H 1 + ions).
Unable to display preview. Download preview PDF.
- 1.G. F. Bogdanov and B. P. Maksimenko, Atomnaya Energiya, 19: 449 (1965).Google Scholar
- 2.N. N. Brevnov et al., Atomnaya Energiya, 20: 149 (1966).Google Scholar
- 3.F. Seitz, in: “Radiation Effects upon Semiconductors and Insulators,” Russian translation, S. M. Ryvkin, ed., Moscow, Foreign Literature Press (1954).Google Scholar
- 4.R. I. Ewing, IRE Trans., N.S., 9 (3): 207 (1962).Google Scholar
- 5.V. G. Brovchenko and Yu. D. Molchanov, Prib. i Tekhn. Eksperim., No. 4, p. 5 (1964).Google Scholar
- 6.F. Cappelani and G. Restelli, Nuclear Instr. and Methods, 25: 2230 (1964).Google Scholar