Abstract
The single-band Hubbard model has been proposed1 as a candidate to describe the high-temperature copper-oxide superconductors. There are two ways to approach such a strongly correlated electron system with the intrinsic 2D antiferromagnetic correlations. One is from the strong coupling, localized limit, where one could get a Mott insulator in the half-filled case with one electron per Cu site, described by the antiferromagnetic (AF) Heisenberg Hamiltonian. The alternative way is from the itinerant approach, where the insulating spin-density-wave (SDW) state is present at the half-filling. From the itinerant approach, the doping effects of holes on the SDW background will be discussed in the present paper.
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A generalized Fork term like U ∑j<c+ j↑cj↓>+U ∑jc+ j↑cj↓<cj↑c+ j↓> should be also retained in H for a self-consistent mean-field approach as H involves spin- flip process. But we found such a term actually has a negligible contribution when ι ≪ ξ.
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© 1991 Plenum Press, New York
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Weng, Z.Y., Ting, C.S. (1991). Doping Effects on the Spin-Density-Wave Background. In: Reiter, G., Horsch, P., Psaltakis, G.C. (eds) Dynamics of Magnetic Fluctuations in High-Temperature Superconductors. NATO ASI Series, vol 246. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7490-9_34
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DOI: https://doi.org/10.1007/978-1-4684-7490-9_34
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