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Phase Transitions in Group III–V and II–VI Semiconductors at High Pressure

  • S. C. Yu
  • C. Y. Liu
  • I. L. Spain
  • E. F. Skelton

Abstract

Compounds of the group III–V and II–VI elements are technologically important. As a result they have been extensively studied, both theoretically and experimentally. There have been several structural studies of the high pressure phases, pioneered by Jamieson [1,2], but above ~ 100 kbar only a few studies of electrical resistance have been reported. Several “transitions” based on abrupt changes in resistivity have been useful as fixed points.

Keywords

Boron Carbide Transition Pressure Geiger Counter Gibbs Free Energy Difference Transformation Pressure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    J. C. Jamieson, Science 139, 762 (1963).CrossRefGoogle Scholar
  2. 2.
    J. C. Jamieson, Science 139, 845 (1963).CrossRefGoogle Scholar
  3. 3.
    H. G. Drickamer, Rev. Sei. Instr. 41, 1667 (1970).CrossRefGoogle Scholar
  4. 4.
    G. J. Piermarini and S. Block, Rev. Sei. Instr. 46, 973 (1976).CrossRefGoogle Scholar
  5. 5.
    D. L. Decker, J. Appl. Phys. 42, 3239 (1971).CrossRefGoogle Scholar
  6. 6.
    P. M. Bell and H. K. Mao, Trans. Amer. Geophys. Union 58, 518 (1977).Google Scholar
  7. 7.
    L. C. Chhabildas and A. L. Ruoff, J. Appl. Phys. 47, 4182 (1976)CrossRefGoogle Scholar
  8. 8.
    L. C.. Chhabildas and A. L. Ruoff, J. Appl. Phys. 47, 4867 (1976)CrossRefGoogle Scholar
  9. 9.
    J. A. Van Vechten, Phys. Rev. B7, 1479 (1973).CrossRefGoogle Scholar
  10. 10.
    J. C. Phillips, Phys. Rev. Letters 20, 550 (1968).CrossRefGoogle Scholar
  11. 11.
    J. A. Van Vechten, Phys. Rev. 182, 891 (1969); also 187, 1007 (1969).Google Scholar
  12. 12.
    J. C. Phillips and J. A. Van Vechten, Phys. Rev. B2, 2147 (1970)CrossRefGoogle Scholar
  13. 13.
    W. A. Bassett, T. Takahashi, and P. W. Stook, Rev. Sei. Instr. 38, 37 (1967).CrossRefGoogle Scholar
  14. 14.
    G. J. Piermarini, S. Block, and J. D. Barnett, J. Appl. Phys. 44, 5377 (1973).CrossRefGoogle Scholar
  15. 15.
    E. F. Skelton, C. Y. Liu, and I. L. Spain, High Temp.-High Press., 9, 19 (1977).Google Scholar
  16. 16.
    B. C. Giessen and G. F. Gordon, Science 159, 973 (1958).CrossRefGoogle Scholar
  17. 17.
    E. F. Skelton, Rept. NRL Prog. (1972), p. 31.Google Scholar
  18. 18.
    K. Syassen and W. B. Holzapfel, in Europhysics Conf. Abstracts, Electronic Properties of Solids Under High Pressure, Leuven, Belgium (1975), p. 75.Google Scholar
  19. 19.
    E. F. Skelton, I. L. Spain, S. C. Yu, C.Y. Liu and E. R. Carpenter, Jr., Rev. Sei. Instr. 48, 879 (1977).CrossRefGoogle Scholar
  20. 20.
    E. F. Skelton, I. L. Spain, and F. J. Rachford, “High Pressure Structural and Lattice Dynamical Investigations at Reduced Temperatures,” to be published in Proc. Intern. Conf. on High Pressure and Low Temperature Physics, Cleveland, Ohio (1978).Google Scholar
  21. 21.
    S. Minomura and H. G. Drickamer, J. Phys. Chem. Solids 23, 451 (1962).CrossRefGoogle Scholar
  22. 22.
    G. A. Samara and H. G. Drickamer, J. Phys. Chem. Solids 23, 457 (1962).CrossRefGoogle Scholar
  23. 23.
    M. D. Banus and M. C. Lavine, J. Appl. Phys. 40, 409 (1969).CrossRefGoogle Scholar
  24. 24.
    J. S. Kasper and H. Brandhorst, J. Chem. Phys. 41, 3768 (1964).CrossRefGoogle Scholar
  25. 25.
    D. B. McWhan and N. Marezio, J. Chem. Phys. 45, 2508 (1966).CrossRefGoogle Scholar
  26. 26.
    M. D. Banus and M. C. Lavine, J. Appl. Phys. 38, 2042 (1967).CrossRefGoogle Scholar
  27. 27.
    P. S. Smith and J. E. Martin, Nature 196, 762 (1962).CrossRefGoogle Scholar
  28. 28.
    F. Birch, J. Geophys. Res. 57, 227 (1952).CrossRefGoogle Scholar
  29. 29.
    F. D. Murnaghan, Amer. J. Math 59, 235 (1973).MathSciNetCrossRefGoogle Scholar
  30. 30.
    Piezo-electric, Piezo-optic and Electro-optic Constants of Crystals,“ Landolt Bornstein, Vol. 1, Group III, Springer- Verlag, Berlin, Heidelberg, New York (1966).Google Scholar
  31. 31.
    A. Jayaraman, W. Klement, and G. C. Kennedy, Phys. Rev. 130, 540 (1963).CrossRefGoogle Scholar
  32. 32.
    G. D. Pitt, High Temp.-High Press. 1, 111 (1969).Google Scholar
  33. 33.
    P. N. Adler, J. Phys. Chem. Solids 30, 1077 (1969).CrossRefGoogle Scholar
  34. 34.
    C. Y. Liu, I. L. Spain, and E. F. Skelton, J. Phys. Chem. Solids 39, 113 (1978).CrossRefGoogle Scholar
  35. 35.
    L. M. Foster and J. M. Woods, IBM Res. Rept. RC3116 (1970).Google Scholar
  36. 36.
    G. B. Stringfellow, J. Phys. Chem. Solids 33, 665 (1972).CrossRefGoogle Scholar
  37. 37.
    G. B. Stringfellow, Mat. Res. Bull. 6, 371 (1971).CrossRefGoogle Scholar
  38. 38.
    J. Wanagel, V. Arnold, and A. L. Ruoff, J. Appl. Phys. 47, 2621 (1976).CrossRefGoogle Scholar
  39. 39.
    A. Onodera, N. Kawai, K. Ishizaki, and I. L. Spain, Sol. St. Comm. 14, 803 (1974).CrossRefGoogle Scholar
  40. 40.
    F. P. Bundy, Rev. Sei. Instr. 46, 1318 (1975).CrossRefGoogle Scholar
  41. 41.
    C. E. Homan, D. P. Kendall, T. E. Davidson, and J. Frankel, Solid St. Comm. 17, 831 (1975).CrossRefGoogle Scholar
  42. 42.
    C. H. Bates, W. B. White, and R. Roy, Science 137, 993 (1962).CrossRefGoogle Scholar
  43. 43.
    R. E. Hanneman, M. D. Banus, and H. C. Gatos, J. Phys. Chem. Solids 25, 293 (1964).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1979

Authors and Affiliations

  • S. C. Yu
    • 1
  • C. Y. Liu
    • 1
  • I. L. Spain
    • 1
  • E. F. Skelton
    • 2
  1. 1.University of MarylandCollege ParkUSA
  2. 2.Naval Research LaboratoryUSA

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