Abstract
The optical properties of strained Ge-Si heterostructures are reviewed with particular emphasis on both strain and ordering in determining the energy band structure. electro-reflectance and Raman Ge-Si superlattices with periodicities of a few atomic monolayers are now known to have properties quite distinct from those of Ge-Si alloys. Measurements of absorption, electro-reflectance and photo-luminescence have produced complementary supporting evidence for the existence of a direct band gap in certain Ge-Si superlattices.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., Herzog, H.-J., 1986, Surface Sci.. 174: 640.
Cerdeira, F., Alonso, M.I., Niles, D., Garriga, M., Cardona, H., 1989, Phys Rev. B. 40:xxx.
Friede L, P., Hybertsen, M.S., Schlüter, M., 1989, Phys. Rev. B.. to be published.
Gell, M.A., 1989, Appl. Phys. Lett., to be published.
Menendez, J., Pinczuk, A., Bevk, J., Mannaerts, J.P., 1988, J. Vac. Sci. Tech. B. B6: 1306.
Paul, W., Warschauer, D.M., 1959, J. Phys. Chem. Solids. 6: 6.
Pearsall, T.P., Temkin, H., Bean, J.C., Luryi, S., 1986b, Electron Dev. Lett.. EDL-7:330.
Pollak, F.H., 1990, “Strained-Layer Superlattices Vol. 1”, in Semiconductors and Semimetals, ed. T.P. Pearsall, Academic Press, New York.
Renucci, J.B., Renucci, M.A., Cardona, M., 1971, in Light Scattering in Solids, ed. M. Balkanski, Flammarion, Paris, p. 326.
Stroud, D., Ehrenreich, H., 1970, Phys. Rev. B, 2: 3197.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Plenum Press, New York
About this chapter
Cite this chapter
Pearsall, T.P. (1990). Optical Properties of Ge-Si Superlattices. In: Chamberlain, J.M., Eaves, L., Portal, JC. (eds) Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 231. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7412-1_21
Download citation
DOI: https://doi.org/10.1007/978-1-4684-7412-1_21
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-7414-5
Online ISBN: 978-1-4684-7412-1
eBook Packages: Springer Book Archive