Abstract
This paper presents the recent advances on the in situ reflectance difference spectroscopy on metalorganic chemical vapor deposition growth technique. The high sensitivity of this in situ diagnostic, allows the growth of high quality III–V semiconductors heterojunctions, quantum wells and superlattices for photonic and electronic devices on lattice matched or alternative substrates, such as Si for the next decade’s OEICs.
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Razeghi, M., Acher, O. (1990). Advanced Materials Technology for the Next Decade’s OEICs. In: Chamberlain, J.M., Eaves, L., Portal, JC. (eds) Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. NATO ASI Series, vol 231. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-7412-1_20
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