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Advanced Materials Technology for the Next Decade’s OEICs

  • M. Razeghi
  • O. Acher
Part of the NATO ASI Series book series (NSSB, volume 231)

Abstract

This paper presents the recent advances on the in situ reflectance difference spectroscopy on metalorganic chemical vapor deposition growth technique. The high sensitivity of this in situ diagnostic, allows the growth of high quality III–V semiconductors heterojunctions, quantum wells and superlattices for photonic and electronic devices on lattice matched or alternative substrates, such as Si for the next decade’s OEICs.

Keywords

Metal Organic Chemical Vapour Deposition Optical Anisotropy Surface Anisotropy Monolithic Integration Solid State Comm 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • M. Razeghi
    • 1
  • O. Acher
    • 1
  1. 1.THOMSON-C.S.F - Laboratoire Central de RecherchesOrsay CedexFrance

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