Optical Probes of Resonant Tunneling Structures

  • Jeff F. Young
  • B. M. Wood
  • S. Charbonneau
Part of the NATO ASI Series book series (NSSB, volume 231)


Semiconductor growth techniques have advanced to the point where layered structures can be accurately produced with sharp-edged potential energy steps that have widths comparable to the de Broglie wavelength of energetic electrons. Such structures are ideal for studying and exploiting the physics of electron tunneling in semiconductors. A wide range of potential energy profiles can be designed and implemented to facilitate the investigation of fundamental problems such as the time taken to tunnel, and the possible influences of scattering events on tunneling.


Resonant Tunneling Negative Differential Resistance Tunneling Time Exciton Formation Resonant Tunneling Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • Jeff F. Young
    • 1
  • B. M. Wood
    • 1
  • S. Charbonneau
    • 1
  1. 1.Division of PhysicsNational Research CouncilOttawaCanada

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