High-Frequency Applications of Resonant-Tunneling Devices
Since the prediction (Kazarinov and Suris, 1971; Tsu and Esaki, 1973) and first observation (Chang et al., 1974) of resonant tunneling through double-barrier heterostructures, there has been increasing interest in the field. This renewed interest arises in part because of the advances in the ease of fabrication by molecular beam epitaxy (MBE) of the atomically thin structures required, and in part because the charge-transport process has been shown to be extremely fast (Sollner et al., 1983). The quality of the heterostructure interfaces in the GaAs/AlAs system has been improved to the point that peak-to- valley (P/V) ratios of 3–4 at room temperature (Shewchuck et al., 1985; Goodhue et al., 1986) and nearly 10 at 77 K are easily achieved with current densities well above 104 A/cm2. New material systems have been explored by several groups, the most notable being InGaAs lattice-matched to InP substrates with AlAs barriers. The Fujitsu group first showed the great promise of this material (Inata et al., 1987), and the best published results give a P/V ratio of about 30 at 300 K (Broekaert and Fonstad, 1988).
KeywordsEquivalent Circuit Molecular Beam Epitaxy Depletion Region Current Waveform Resonant Tunneling
Unable to display preview. Download preview PDF.
- Batelaan, P.D., Frerking, M.A., 1987, in Conference Digest, Twelfth International Conference Infrared and Millimeter Waves, edited by R.J. Temkin (IEEE, New York ), p. 14.Google Scholar
- Beresford, R., Luo, L.F., Longenbach, K., Wang, W.I., 1989, IEEE Int. Electron Devices Meeting Tech. Digest (IEEE, New York), paper 21.2. Blatt, J.,and Weisskopf, V.F., 1979, Theoretical Nuclear Physics (Springer, Berlin, Heidelberg ).Google Scholar
- Broekaert, T., Fonstad, C., 1989, IEEE Int. Electron Devices Meeting Tech. Digest ( IEEE, New York), paper 21. 5.Google Scholar
- Capasso, F., Sen, S., Gossard, A.C., Hutchinson, A.L., English, J.E., 1986, IEEEElectron Device Lett. EDL-7, 573.Google Scholar
- Carlson, D., Schneider, M.V., 1975, IEEE Trans. Microwave Theory Tech. MTT-23, 828.Google Scholar
- Frensley, W., 1986, IEEE Int. Electron Devices Meeting Tech. Digest ( IEEE, New York), paper 25. 5.Google Scholar
- Inata, T., Muto, S., Nakata, Y., Sasa, S., Fujii, T., Hiyamizu, S., 1987, Jpn. J. Appl. Phys. 26, LI 332.Google Scholar
- Kazarinov, R.F., Suris, R.A., 1971, Sov. Phys. Semicond. 5, 707.Google Scholar
- Sollner, T.C.L.G., Le, H.Q., Correa, C.A., Goodhue, W.D., 1985, Proc. IEEE/Cornell Conf. Advanced Concepts in High Speed Semicond. Devices and Circuits ( IEEE, New York ), p. 252.Google Scholar
- Sollner, T.C.L.G., Brown, E.R., Goodhue, W.D., 1987b, in Picosecond Electronics and Optoelectronics II, vol. 24 in Springer Series in Electronics and Photonics ( Springer, Berlin,), p. 102.Google Scholar
- Sollner, T.C.L.G., Brown, E.R., Goodhue, W.D., Le, H.Q., 1990, in Physics of Quantum Electron Devices, Springer Series in Electronics and Photonics, vol. 28, p. 147 ( Springer, Berlin,).Google Scholar
- Sze, S.M., 1981, Physics of Semiconductor Devices (Wiley, New York), Ch. 10. Tsu, R., Esaki, L., 1973, Appl. Phys. Lett. 22, 562.Google Scholar