Introduction to Resonant Tunnelling in Semiconductor Heterostructures
The effective mass approximation for conduction electrons tunnelling through a semiconductor heterostructure barrier is described. The current-voltage characteristics of a variety of double barrier resonant tunnelling devices with wide quantum wells (60–120 nm) and based on the (AlGa)As/GaAs system are presented. In these structures a large number of electron standing wave resonances are observed in I(V). The effect of a transverse magnetic field (B parallel to the plane of the barriers) on the resonances in I(V) is examined. Resonant tunnelling into hybrid magneto-electric states of the quantum well is observed and is interpreted using the effective mass approximation.
KeywordsResonant Tunnelling Accumulation Layer Effective Mass Approximation Oscillatory Structure Double Barrier
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