Quantum Device Modeling with the Convolution Method

  • T. P. Orlando
  • P. F. Bagwell
  • R. A. Ghanbari
  • K. Ismail
Part of the NATO ASI Series book series (NSSB, volume 231)


Recent advances in materials fabrication and nanolithography have made possible a generation of semiconducting structures whose conductance is governed by quantum mechanical phenomena. In particular, nanostructures on Si MOSFETs and GaAs MODFETs have shown modulations in their conductance versus gate voltage characteristics that have been attributed to quantum mechanical effects. In this paper, we review a modeling scheme which gives a unified way of understanding how these quantum effects are affected by temperature, mobility, voltage, and the structure of the device. This model provides not only a qualitative understanding of the various quantum phenomena, but also a basis for developing efficient computational algorithms for modeling specific devices. We have called this scheme the convolution method because most of the calculations can be written in terms of separate convolutions involving the individual phenomena of temperature, mobility, voltage, and structure.


Ballistic Transport Convolution Method Semiclassical Method Resonant Tunneling Device Back Gate Bias 


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Copyright information

© Plenum Press, New York 1990

Authors and Affiliations

  • T. P. Orlando
    • 1
  • P. F. Bagwell
    • 1
  • R. A. Ghanbari
    • 1
  • K. Ismail
    • 1
  1. 1.Department of Electrical Engineering and Computer ScienceMassachusetts Institute of TechnologyCambridgeUSA

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