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Nonlinear Optical Properties of n-i-p-i and Hetero n-i-p-i Structures

  • Gottfried H. Döhler
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

n-i-p-i doping superlattices1 consist of a periodic sequence of n- and p-doped layers of mesoscopic thickness, possibly with interspersed intrinsic (i-) layers. A periodic space charge potential which is due to the space charge of ionized donors D+ and ionized acceptors A modulates the conduction and valence band edge of the otherwise uniform host material, n-i-p-i super-lattices differ quantitatively and qualitatively from their compositional counterparts, the hetero-structure superlattices which consist of a periodic sequence of layers of different semiconductor materials of mesoscopic thickness. Quantitatively, nearly any arbitrary shape and height of the superlattice potential barriers (up to the value of the band gap Eo g, or even larger, as we shall see later) can be achieved (see Fig. 1). One of the most important qualitative differences, which will be important in the following, is the “ indirect gap in real space”. By this term we mean that the center of the lowest electron subbands is shifted by half a superlattice period with respect to the hole subband wave functions (Fig. 1). Secondly, there are large built-in electric fields, whose strength is given approximately by the height of the potential barriers divided by half the superlattice period. Third, the electron hole recombination lifetimes are strongly enhanced due to the spatial separation between electrons and holes. Fourth, as a consequence, the electron and hole density in the n- and p-doping layers becomes dynamically tunable within a wide range.

Keywords

Nonlinear Optical Property Bulk Semiconductor Molecular Beam Epitaxial Recombination Lifetime Band Filling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    G.H. Döhler, “Electron States in Crystals with“n-i-p-i Superstructures””, Phys. Stat. Sol. 52: 79 (1972) G.H Döhler, “Electrical and Optical Properties of Crystals with “n-i-p-i Superstructure””, Phys. Stat. Sol. (b)52: 533 (1972) G.H. Döhler, “Doping Superlattices (“n-i-p-i Crystals”)”, IEEE QE-22; 1682 (1986) G.H. Döhler, “The Physics and Applications of n-i-p-i Doping Superlattices”, CRC Review in Solid State and Material Science, 13: (1986)ADSCrossRefGoogle Scholar
  2. 2.
    G.H. Döhler, G. Hasnain, and J.N. Miller, “In situ Grown-in Selective Contacts to n-i-p-i Doping Superlattice Crystals Using Molecular Beam Epitaxial Growth Through a Shadow Mask”, Appl. Phys. Lett. 49: 704 (1986) P. Kiesel, P. Riel, H. Lin, N. Linder, J.F. Miller, and G.H. Döhler; “Linear Response, Optical Switching, and Optical Bistability in Reverse Biased n-i-p-i Doping Superlattices”, to be published in Superlattices and Micro-structuresADSCrossRefGoogle Scholar
  3. 3.
    W. Franz, Z. Naturforsch. 13: 484 (1958); L.V. Keldysh, Zh. Eskp. Teor. Fiz. 34: 1138 (1958) / Sov. Phys. JETP 7: 788 (1958); D.E. Aspnes and N. Bottka, in Semiconductors and Semimetals, Vol. 9, edited by R.K. Willardson and A.C. Beer, Academic Press, New York, p. 457(1972)Google Scholar
  4. 4.
    D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, and CA. Burrus, Phys. Rev. B32: 1043 (1985)ADSGoogle Scholar
  5. 5.
    E. Burstein, A. Pinczuk and D.L. Mills, Surface Science 98: 451 (1980)ADSCrossRefGoogle Scholar
  6. 6.
    Y.H. Lee, A. Chavez-Pirson, S.W. Koch, H.M. Gibbs, S.H. Park, J. Morhange, A. Jeffery, N. Peyghambarian, L. Banyai, A.C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 57: 2446 (1986)ADSCrossRefGoogle Scholar
  7. 7.
    C.J. Chang-Hasnain, G. Hasnain, N.M. Johnson, G.H. Döhler, J.N. Miller, J.R. Whinnery, and A. Dienes, “Tunable Electroabsorption in Gallium Arsenide Doping Superlattices”, Appl. Phys. Lett. 50: 915 (1987)ADSCrossRefGoogle Scholar
  8. 8.
    G.H. Döhler, “Nonlinear Properties of n-i-p-i Doping Superlattices”, NSF Workshop on Optical Nonlinearities, Fast Phenomena and Signal Processing, N. Peyghambarian, Ed. (Tucson, AZ., 1986), 292Google Scholar
  9. 9.
    A. Kost, E. Garmire, A. Danner, and P.D. Dapkus, Appl. Phys. Lett. 52: 637(1988)ADSCrossRefGoogle Scholar
  10. 10.
    A. Kost, M. Kawase, E. Garmire, A. Danner, H.C. Lee, and P.D. Dapkus, “Carrier Lifetimes in a Hetero n-i-p-i Structure”, SPIE Proc. Quantum Well and Superlattice Physics II, 943: 114 (1988)Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Gottfried H. Döhler
    • 1
  1. 1.Institut für Technische PhysikUniversität Erlangen-NürnbergErlangenGermany

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