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Patterned Quantum Well Semiconductor Lasers

  • E. Kapon
  • J. P. Harbison
  • R. Bhat
  • D. M. Hwang
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

Semiconductor injection lasers exhibiting very low threshold currents (less than 1 mA) are required for applications involving the integration of a large number of lasers on a single chip due to their low power consumption. Furthermore, low-threshold injection lasers are charcterized by higher switching speeds because of the lower carrier densities necessary for reaching their thresholds [1]. Thus, such lasers are very attractive in applications requiring a large number of high speed lasers, e.g., computer optical interconnects [2] and other optoelectronic integrated circuit (OEIC) schemes.

Keywords

Molecular Beam Epitaxy Quantum Well Injection Laser Single Quantum Well Quantum Well Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    K.Y. Lau, P.L. Derry, and A. Yariv, Appl. Phys. Letters 52, 88 (1988)ADSCrossRefGoogle Scholar
  2. [2]
    J.D. Crow, IEEE Comm. Mag. 23, 16 (1985)ADSCrossRefGoogle Scholar
  3. [3]
    T. Tsukada, J. Appl. Phys. 45, 1239 (1974)CrossRefGoogle Scholar
  4. [4]
    R.L. Thornton, R.D. Burnham, T.L. Paoli, N. Holonyak, Jr., and D.G. Deppe, Appl. Phys. Letters 47, 1239 (1985)ADSCrossRefGoogle Scholar
  5. [5]
    Y. Arakawa and A. Yariv, IEEE Quantum Electron. QE-21, 1666 (1985)ADSCrossRefGoogle Scholar
  6. [6]
    E. Kapon, M.C. Tamargo, and D.M. Hwang, Appl. Phys. Letters 50, 347 (1987)ADSCrossRefGoogle Scholar
  7. [7]
    E. Kapon, D.M. Hwang, R. Bhat, and M.C. Tamargo, Superlattices and Microstructures 4, 297 (1988)ADSCrossRefGoogle Scholar
  8. [8]
    E. Kapon, J.P. Harbison, C.P. Yun, and N.G. Stoffel, Appl. Phys. Letters 52, 607 (1988)ADSCrossRefGoogle Scholar
  9. [9]
    R. Bhat, E. Kapon, D.M. Hwang, M.A. Koza, and C.P. Yun, to be published in J. Crystal Growth (1988)Google Scholar
  10. [10]
    C. Weisbuch, R. Dingle, A.C. Gossard, and W. Wiegman, Solid State Comm. 38, 709 (1981)ADSCrossRefGoogle Scholar
  11. [11]
    E. Kapon, C.P. Yun, J.P. Harbison, L.T. Florez, and N.G. Stoffel, Electron. Letters 24, 985 (1988)CrossRefGoogle Scholar
  12. [12]
    E. Kapon, J.P. Harbison, C.P. Yun, and L.T. Florez, submitted for publication.Google Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • E. Kapon
    • 1
  • J. P. Harbison
    • 1
  • R. Bhat
    • 1
  • D. M. Hwang
    • 1
  1. 1.Bellcore Navesink Research and Engineering CenterRed BankUSA

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