Advertisement

Optical Bistability and Nonlinear Switching in Quantum Well Amplifiers

  • M. J. Adams
  • L. D. Westbrook
Part of the NATO ASI Series book series (NSSB, volume 194)

Abstract

There is growing interest worldwide in the potential applications of diode laser amplifiers for all-optical logic, switching, wavelength conversion, pulse-shaping, and other aspects of signal processing. Two types of device are currently under study, corresponding to two different physical mechanisms of operation. In the first type the dispersive nonlinearity at wavelengths close to the band-gap is utilized to produce switching and bistability between two different states of transmission. In the second type the device consists of two or more sections, each with its own electrical contact, and the switching arises as a consequence of the absorptive nonlinearity when some sections are driven close to lasing threshold and the others receive little or no current. The advantages of the former device type are its ready availability and low switching energy (of order femtojoules), although it suffers from a marked sensitivity to the wavelength of the optical input. By comparison, the two-section device is claimed to show good tolerance to input wavelength and can give significantly higher contrast ratios between the “off” and “on” states.

Keywords

Multiple Quantum Well Saturation Intensity Absorptive Nonlinearity Optical Input Double Heterostructure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    K.Y. Lau, P.L. Derry, and A. Yariv, Appl. Phys. Letters 52, 88 (1988)ADSCrossRefGoogle Scholar
  2. [2]
    S. Tarucha and H. Okamoto, Appl. Phys. Letters 49, 543 (1986)ADSCrossRefGoogle Scholar
  3. [3]
    A.L. Kucharska, P. Blood, E.D. Fletcher, and P.J. Hulyer, IEE Proc. J. Optoelectron. 135, 31 (1988)CrossRefGoogle Scholar
  4. [4]
    K. Kojima, K. Kyuma, S. Noda, J. Ohte, and K. Hamanaka, Appl. Phys. Letters 52, 942 (1988)ADSCrossRefGoogle Scholar
  5. [5]
    T. Yuasa, N. Hamao, M. Sugimoto, N. Takado, M. Ueno, H. Iwata, Y. Tashiro, K. Onabe, and K. Asakawa, presented at CLEO 1988, W06, Anaheim (1988)Google Scholar
  6. [6]
    H. Kawaguchi, Opt. and Quant. Electron., 19, S1 (1987)CrossRefGoogle Scholar
  7. [7]
    G.J. Lasher, Solid State Electron. 7, 707 (1964)ADSCrossRefGoogle Scholar
  8. [8]
    M.J. Adams, J.V. Collins, and I.D. Henning, IEE Proc. J. Optoelectron. 132, 58 (1985)ADSCrossRefGoogle Scholar
  9. [9]
    H.-F. Liu, T. Kamiya, and B.-X. Du, IEEE J. Quantum Electron. 22, 1579 (1986)ADSCrossRefGoogle Scholar
  10. [10]
    M. Ueno and R. Lang, J. Appl. Phys. 58, 1689 (1985)ADSCrossRefGoogle Scholar
  11. [11]
    A.J. Lowery, IEE Proc. J. Optoelectron. 135, 242 (1988)CrossRefGoogle Scholar
  12. [12]
    M.J. Adams, H.J. Westlake, and M.J. O’Mahony, in: Optical Bistability and Instabilities in Semiconductors, ed. H. Haug, Academic Press, New York (1988)Google Scholar
  13. [13]
    L.D. Westbrook, IEE Proc. J. Optoelectron. 133, 135 (1986)CrossRefGoogle Scholar
  14. [14]
    N.K. Dutta, R.L. Hartman, and W.T. Tsang, IEEE J. Quantum Electron. 19, 1243 (1983)ADSCrossRefGoogle Scholar
  15. [15]
    N.K. Dutta, R.L. Hartman, and W.T. Tsang, IEEE J. Quantum Electron. 19, 1613, (1983)ADSCrossRefGoogle Scholar
  16. [16]
    O. Wada, T. Sanada, H. Nobuhara, M. Kuno, M. Makiuchi, and T. Fujii, 10th IEEE Semiconductor Laser Conference, Kanazawa (1986).Google Scholar
  17. [17]
    D.A.B. Miller, D.S. Chemla, D.J. Eilenberger, P.W. Smith, A.C. Gossard, and W.T. Tsang, Appl. Phys. Letters 41, 679 (1982)ADSCrossRefGoogle Scholar
  18. [18]
    S.H. Park, J.F. Morhange, A.D. Jeffery, R.A. Morgan, A. Chavez-Pirson, H.M. Gibbs, S.W. Koch, N. Peyghambarian, M. Derstine, A.C. Gossard, J.H. English, and W. Wiegmann, Appl. Phys. Letters 52, 1201 (1988)ADSCrossRefGoogle Scholar
  19. [19]
    N.K. Dutta, S.G. Napholtz, R. Yen, T. Wessel, T.M. Shen, and N.A. Olsson, Appl. Phys. Letters 46, 1036 (1985)ADSCrossRefGoogle Scholar
  20. [20]
    B. Sermage, D.S. Chemla, D. Sivko, and A.Y. Cho, IEEE J. Quantum Electron. 22, 774 (1986)ADSCrossRefGoogle Scholar
  21. [21]
    C. Smith, R.A. Abram, and M.G. Burt, Electron. Lett. 20, 893 (1984)CrossRefGoogle Scholar
  22. [22]
    M.G. Burt, Electron. Lett. 19, 210 (1983)ADSCrossRefGoogle Scholar
  23. [23]
    Y. Arakawa and A. Yariv, IEEE Quantum Electron. 21, 1666 (1985)ADSCrossRefGoogle Scholar
  24. [24]
    K. Uomi, N. Chinone, T. Ohtoshi, and K. Kajimura, J. Appl. Phys. Japan 24, L539 (1985)ADSCrossRefGoogle Scholar
  25. [25]
    L.D. Westbrook, D.M. Cooper, and P.C. Spurdens, 11th IEEE Semiconductor Laser Conference, Boston (1988)Google Scholar
  26. [26]
    S. Tarucha, Y. Horikoshi, and H. Okamoto, J. Appl. Phys. Japan 22, L482 (1983)ADSCrossRefGoogle Scholar
  27. [27]
    P. Blood, E.D. Fletcher, P.J. Hulyer, and P.M. Smowton, Appl. Phys. Letters 48, 1111 (1986)ADSCrossRefGoogle Scholar
  28. [28]
    S. Tarucha, K. Kobayashi, Y. Horikoshi, and H. Okamoto, J. Appl. Phys. Japan 23, 874 (1984)ADSCrossRefGoogle Scholar
  29. [29]
    D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood, and CA. Burrus, Phys. Rev. Letters 53, 2173 (1984)ADSCrossRefGoogle Scholar
  30. [30]
    L.D. Westbrook and M.J. Adams, IEE Proc. J. Optoelectron. 135, 223 (1988)ADSCrossRefGoogle Scholar
  31. [31]
    C.H. Henry, R.A. Logan, and F.R. Merritt, J. Appl. Phys. 51, 3042 (1980)ADSCrossRefGoogle Scholar
  32. [32]
    N. Ogasawara, R. Ito, and R. Morita, J. Appl. Phys. Japan 24, L519 (1985)ADSCrossRefGoogle Scholar
  33. [33]
    C.A. Green, N.K. Dutta, and W. Watson, Appl. Phys. Letters 50, 1409 (1987)ADSCrossRefGoogle Scholar
  34. [34]
    M.G. Burt, Electron. Letters 20, 27 (1984)CrossRefGoogle Scholar
  35. [35]
    J. Nagle, S. Hersee. M. Krakowski, T. Weil, and C Weisbuch, Appl. Phys. Letters 49, 1325 (1986)ADSCrossRefGoogle Scholar
  36. [36]
    W. Streifer, D.R. Scifres, and R.D. Burnham, Appl. Opt. 18, 3547 (1979)ADSCrossRefGoogle Scholar
  37. [37]
    K. Tai, J. Hegarty, and W.T. Tsang, Appl. Phys. Letters 51, 86 (1987)ADSCrossRefGoogle Scholar
  38. [38]
    A.M. Fox, A.C. Maciel, M.G. Shorthose, J.F. Ryan, M.D. Scott, J.I. Davies, and J.R. Riffat, Appl. Phys. Letters 51, 30 (1987).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • M. J. Adams
    • 1
  • L. D. Westbrook
    • 1
  1. 1.Martlesham HeathBritish Telecom Research LaboratoriesIpswichEngland

Personalised recommendations