Optical Spectroscopy on Two- and One-Dimensional Semiconductor Structures

  • A. Forchel
  • G. Tränkle
  • U. Cebulla
  • H. Leier
  • B. E. Maile
Part of the NATO ASI Series book series (NSSB, volume 194)


Due to the enormous progress of epitaxial techniques many semiconductor materials can nowadays be fabricated with a previously unattained degree of perfection. In particular molecular beam epitaxy (MBE) and metalorganic vapour phase epitaxy (MOVPE) have been developed during the last decade.1,2 They allow the growth of high quality sequences of III-V-semiconductor materials. With these methods the growth can be controlled down to the level of individual atomic layers.3


Quantum Efficiency Quantum Wire Interparticle Distance Metalorganic Vapour Phase Epitaxy Electron Hole Plasma 


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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • A. Forchel
    • 1
  • G. Tränkle
    • 2
  • U. Cebulla
    • 1
  • H. Leier
    • 1
  • B. E. Maile
    • 1
  1. 1.4. Physikalisches InstitutUniversität StuttgartStuttgart 80Germany
  2. 2.W. Schottky InstitutGarchingGermany

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