Picosecond and Subpicosecond Luminescence of GaAs/GaAlAs Superlattices

  • Benoit Deveaud
  • Bertrand Lambert
  • André Chomette
  • Fabrice Clerot
  • André Regreny
  • Jagdeep Shah
  • T. C. Damen
  • Bernard Sermage
Part of the NATO ASI Series book series (NSSB, volume 194)


Picosecond and subpicosecond luminescence techniques have been used to study vertical transport in GaAs/GaAlAs superlattices. The great advantages of these techniques are the very good time resolution and the absence of processing of the sample. We describe in this revue the main results and emphasize on some of the interesting aspects of the interpretation of the results. Both electron and hole mobilities can be obtained by using different excitation densities. They are compared with theoretical estimates.


Hole Mobility Surface Recombination Vertical Transport Excitation Density Capture Time 
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Benoit Deveaud
    • 1
  • Bertrand Lambert
    • 1
  • André Chomette
    • 1
  • Fabrice Clerot
    • 1
  • André Regreny
    • 1
  • Jagdeep Shah
    • 2
  • T. C. Damen
    • 2
  • Bernard Sermage
    • 3
  1. 1.Centre National D’Etudes des TelecommunicationsLannionFrance
  2. 2.AT&T Bell LaboratoriesHolmdelUSA
  3. 3.Centre National D’Etudes des TelecommunicationsBagneuxFrance

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