Excitonic Enhancement of Stimulated Recombination in GaAs/AlGaAs Multiple Quantum Wells
The transient behavior of absorption saturation in GaAs/AlGaAs multiple quantum wells is experimentally studied under conditions where stimulated emission governs the absorption recovery. It is found that stimulated recombination is strongly dependent on temperature in the range 80-160 K and that the spectral shape of the absorption edge in the small gain regime is much steeper than expected from uncorrelated electron and hole population distributions. These features are interpreted as a manifestation of the strong electron-hole correlations theoretically expected in 2D structures. Finally a possible application of stimulated recombination to ultrafast optical switching is presented.
KeywordsQuantum Well Absorption Saturation Spot Diameter Multiple Quantum Gain Coefficient
Unable to display preview. Download preview PDF.
- 1.R. S. Knox, “Theory of excitons”, Sol. State Phys. Sup. 5, Acad. Press, NY (1963).Google Scholar
- 11.D. Hulin, M. Joffre, A. Migus, J.L. Oudar, J. Dubard and F. Alexandre, J. de Physique (Paris) Colloque C5, 267 (1987).Google Scholar
- 12.J.L. Oudar and J.A. Levenson, paper ThB7, XVIth Internat. Conf. on Quantum Electron., Tokyo (July 1988).Google Scholar
- 16.J. L. Oudar, C. Tanguy, J. P. Chambaret and D. Hulin, in “Ultrafast Phenomena VI”, Springer, New-York 1988.Google Scholar